发明申请
US20050068696A1 Apparatus having improved hard bias properties of layers in a magnetoresistive sensor
失效
具有改进的磁阻传感器中的层的硬偏置特性的装置
- 专利标题： Apparatus having improved hard bias properties of layers in a magnetoresistive sensor
- 专利标题（中）： 具有改进的磁阻传感器中的层的硬偏置特性的装置
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申请号： US10674831申请日： 2003-09-30
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公开(公告)号： US20050068696A1公开(公告)日： 2005-03-31
- 发明人: Phong Chau , James Freitag , Mustafa Pinarbasi , Hua Zeng , Howard Zolla
- 申请人： Phong Chau , James Freitag , Mustafa Pinarbasi , Hua Zeng , Howard Zolla
- 专利权人： Hitachi Global Technologies Netherlands B.V.
- 当前专利权人： Hitachi Global Technologies Netherlands B.V.
- 主分类号： G11B5/127
- IPC分类号： G11B5/127 ; G11B5/33 ; G11B5/39
摘要：
An apparatus having improved hard bias properties of layers of a magnetoresistance sensor is disclosed. Properties of the hard bias layer are improved using a seedlayer structure that includes at least a layer of silicon and a layer comprising chromium or chromium molybdenum. Further, benefits are achieved when the seedlayer structure includes a layer of tantalum.
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