发明申请
- 专利标题： Method of forming a metal layer using an intermittent precursor gas flow process
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申请号： US10673646申请日： 2003-09-30
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公开(公告)号： US20050069632A1公开(公告)日： 2005-03-31
- 发明人: Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
- 申请人： Hideaki Yamasaki , Tsukasa Matsuda , Atsushi Gomi , Tatsuo Hatano , Mitsuhiro Tachibana , Koumei Matsuzava , Yumiko Kawano , Gert Leusink , Fenton McFeely , Sandra Malhotra , Andrew Simon , John Yurkas
- 申请人地址： JP Tokyo US NY Armonk
- 专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人： Tokyo Electron Limited,International Business Machines Corporation
- 当前专利权人地址： JP Tokyo US NY Armonk
- 主分类号： C23C16/04
- IPC分类号： C23C16/04 ; C23C16/16 ; C23C16/44 ; C23C16/455 ; H01L21/285 ; H01L21/768 ; B05D5/12 ; H01L21/4763
摘要：
A method is provided for forming a metal layer on a substrate using an intermittent precursor gas flow process. The method includes exposing the substrate to a reducing gas while exposing the substrate to pulses of a metal-carbonyl precursor gas. The process is carried out until a metal layer with desired thickness is formed on the substrate. The metal layer can be formed on a substrate, or alternately, the metal layer can be formed on a metal nucleation layer.