发明申请
US20050069781A1 METHOD OF IMPROVING A RESOLUTION OF CONTACT HOLE PATTERNS BY UTILIZING ALTERNATE PHASE SHIFT PRINCIPLE
有权
通过使用替代相位移位原理改进接触孔图案的分辨率的方法
- 专利标题： METHOD OF IMPROVING A RESOLUTION OF CONTACT HOLE PATTERNS BY UTILIZING ALTERNATE PHASE SHIFT PRINCIPLE
- 专利标题（中）： 通过使用替代相位移位原理改进接触孔图案的分辨率的方法
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申请号： US10605377申请日： 2003-09-25
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公开(公告)号： US20050069781A1公开(公告)日： 2005-03-31
- 发明人: Jun-Cheng Lai
- 申请人： Jun-Cheng Lai
- 主分类号： G03C3/02
- IPC分类号： G03C3/02 ; G03C5/00 ; G03F1/00 ; G03F9/00
摘要：
A method of forming a plurality of isolated and closed patterns arranged in an array in a photoresist layer. A phase shift mask is provided. A plurality of first phase shift transparent regions, a plurality of second phase shift transparent regions, and a non-phase shift region are included on the phase shift mask. The first phase shift transparent regions and the second phase shift transparent regions are regularly interlaced in an array. Each of the first phase shift transparent regions and each of the second phase shift transparent regions are separated by the non-phase shift region. An exposure process is perform to form the closed patterns corresponding to the first phase shift transparent regions and the second phase shift transparent regions in the photoresist layer.
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