公开(公告)号：US20050069781A1

公开(公告)日：2005-03-31

申请号：US10605377

申请日：2003-09-25

申请人： Jun-Cheng Lai

发明人： Jun-Cheng Lai

IPC分类号： G03C3/02 ,  G03C5/00 ,  G03F1/00 ,  G03F9/00

CPC分类号： G03F1/30

摘要： A method of forming a plurality of isolated and closed patterns arranged in an array in a photoresist layer. A phase shift mask is provided. A plurality of first phase shift transparent regions, a plurality of second phase shift transparent regions, and a non-phase shift region are included on the phase shift mask. The first phase shift transparent regions and the second phase shift transparent regions are regularly interlaced in an array. Each of the first phase shift transparent regions and each of the second phase shift transparent regions are separated by the non-phase shift region. An exposure process is perform to form the closed patterns corresponding to the first phase shift transparent regions and the second phase shift transparent regions in the photoresist layer.

摘要翻译： 一种在光致抗蚀剂层中形成排列成阵列的多个隔离和封闭图案的方法。 提供了相移掩模。 在相移掩模上包括多个第一相移透明区域，多个第二相移透明区域和非相移区域。 第一相移透明区域和第二相移透明区域以阵列规则交错。 第一相移透明区域和第二相移透明区域中的每一个被非相移区域分开。 执行曝光处理以形成对应于光致抗蚀剂层中的第一相移透明区域和第二相移透明区域的封闭图案。

公开(公告)号：US06200708B1

公开(公告)日：2001-03-13

申请号：US09050740

申请日：1998-03-30

申请人： Jun-Cheng Lai

发明人： Jun-Cheng Lai

IPC分类号： G03F900

CPC分类号： G03F7/70066 ,  G03F7/70633

摘要： A method and system for analyzing the stepping of a reticle mask. A reticle mask includes a first and second corner mask for blocking exposure of a first rectangular area on the wafer surface, a third corner mask for blocking exposure of a second rectangular area on the wafer surface, wherein the first rectangular area is larger than the second rectangular area, and a fourth corner mask of the reticle mask for allowing exposure of a third rectangular area that is smaller than the second rectangular area. A metrology machine produces alignment adjustment values of the result of stepping the reticle mask over the wafer's surface according to reticle mask overlapped exposed corners. The alignment adjustment values comprise an x and y value, and a rotation value. The alignment adjustment values are determined from the difference between the centers of the overlapping results of the third and fourth corner mask.

摘要翻译： 一种用于分析掩模版掩模的步进的方法和系统。 掩模掩模包括用于阻挡晶片表面上的第一矩形区域的暴露的第一和第二拐角掩模，用于阻挡晶片表面上的第二矩形区域的暴露的第三拐角掩模，其中第一矩形区域大于第二矩形区域 矩形区域和掩模版掩模的第四角掩模，用于允许暴露比第二矩形区域小的第三矩形区域。 计量机器根据掩模版掩模重叠的暴露拐角产生将掩模版掩模跨越晶片表面的结果的对准调整值。 对准调整值包括x和y值以及旋转值。 对准调整值根据第三和第四角膜掩模的重叠结果的中心之间的差确定。

公开(公告)号：US07461472B2

公开(公告)日：2008-12-09

申请号：US10250228

申请日：2003-06-16

申请人： Jun-Cheng Lai

发明人： Jun-Cheng Lai

IPC分类号： G03F1/00 ,  G03C5/00

CPC分类号： G03F1/32

摘要： A half-tone phase shift mask including at least a mask substrate, a half-tone phase shift layer and a sheltering layer. The half-tone phase shift layer is a strip-like profile that forms on the surface of the mask substrate. The sheltering layer is formed on the two ends of the half-tone phase shift layer so that a portion of the half-tone phase shift layer is exposed. The sheltering layer has a width greater than the half-tone phase shift layer.

摘要翻译： 包括至少掩模基板，半色调相移层和遮蔽层的半色调相移掩模。 半色调相移层是在掩模基板的表面上形成的条状轮廓。 遮蔽层形成在半色调相移层的两端，使半色调相移层的一部分露出。 遮蔽层的宽度大于半色调相移层。

公开(公告)号：US07008733B2

公开(公告)日：2006-03-07

申请号：US10605377

申请日：2003-09-25

申请人： Jun-Cheng Lai

发明人： Jun-Cheng Lai

IPC分类号： G01F9/00

CPC分类号： G03F1/30

摘要： A method of forming a plurality of isolated and closed patterns arranged in an array in a photoresist layer. A phase shift mask is provided. A plurality of first phase shift transparent regions, a plurality of second phase shift transparent regions, and a non-phase shift region are included on the phase shift mask. The first phase shift transparent regions and the second phase shift transparent regions are regularly interlaced in an array. Each of the first phase shift transparent regions and each of the second phase shift transparent regions are separated by the non-phase shift region. An exposure process is perform to form the closed patterns corresponding to the first phase shift transparent regions and the second phase shift transparent regions in the photoresist layer.

摘要翻译： 一种在光致抗蚀剂层中形成排列成阵列的多个隔离和封闭图案的方法。 提供了相移掩模。 在相移掩模上包括多个第一相移透明区域，多个第二相移透明区域和非相移区域。 第一相移透明区域和第二相移透明区域以阵列规则交错。 第一相移透明区域和第二相移透明区域中的每一个被非相移区域分开。 执行曝光处理以形成对应于光致抗蚀剂层中的第一相移透明区域和第二相移透明区域的封闭图案。

公开(公告)号：US06187486B1

公开(公告)日：2001-02-13

申请号：US09250766

申请日：1999-02-16

申请人： Jun-Cheng Lai ,  Yeur-Luen Tu ,  Chine-Gie Lou

发明人： Jun-Cheng Lai ,  Yeur-Luen Tu ,  Chine-Gie Lou

IPC分类号： G03F900

CPC分类号： G03F7/70466 ,  G03F7/2022 ,  G03F7/203

摘要： A multi-exposure process. By performing the multi-exposure process, the size of the line width can be enlarged or shrunk by the precondition of the fixed pitch. Moreover, the line width can be shrunk to a level even smaller than the resolving power of the stepper or the scanner. Additionally, by using the invention, the exposure energy, the exposure time and the exposure DOF can be fixed while the exposure process is performed. Therefore, the process window is increased and the yield is enhanced. Furthermore, the processing sequence according to the invention is simpler than the conventional photolithography processing sequence, so that the throughput can be increased.

摘要翻译： 多曝光过程。 通过进行多次曝光处理，可以通过固定间距的前提来扩大或缩小线宽的尺寸。 此外，线宽可以缩小到甚至小于步进器或扫描仪的分辨率的水平。 此外，通过使用本发明，可以在执行曝光处理时固定曝光能量，曝光时间和曝光DOF。 因此，处理窗口增加，产量提高。 此外，根据本发明的处理顺序比常规的光刻处理顺序更简单，从而可以提高吞吐量。