发明申请
US20050069818A1 Absorptive resists in an extreme ultraviolet (EUV) imaging layer
审中-公开
吸收抗紫外线（EUV）成像层
- 专利标题： Absorptive resists in an extreme ultraviolet (EUV) imaging layer
- 专利标题（中）： 吸收抗紫外线（EUV）成像层
-
申请号： US10676411申请日： 2003-09-30
-
公开(公告)号： US20050069818A1公开(公告)日： 2005-03-31
- 发明人: Robert Bristol , Heidi Cao , Robert Meagley
- 申请人： Robert Bristol , Heidi Cao , Robert Meagley
- 主分类号： G03F7/00
- IPC分类号： G03F7/00 ; G03F7/004 ; G03F7/039
摘要：
An embodiment of the present invention includes a technique to provide a highly absorptive resist. A resist is formed using a highly absorbing material. The resist is thinned to a pre-determined thickness used as an imaging layer. The efficiency of a photoactive acid generator (PAG) is improved to capture secondary electrons produced by an ionizing radiation in the resist.
信息查询
