发明申请
US20050070030A1 Device and method for forming a contact to a top electrode in ferroelectric capacitor devices
审中-公开
在铁电电容器件中形成与顶部电极的接触的装置和方法
- 专利标题: Device and method for forming a contact to a top electrode in ferroelectric capacitor devices
- 专利标题(中): 在铁电电容器件中形成与顶部电极的接触的装置和方法
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申请号: US10672308申请日: 2003-09-26
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公开(公告)号: US20050070030A1公开(公告)日: 2005-03-31
- 发明人: Stefan Gernhardt , Haoren Zhuang , Ulrich Egger
- 申请人: Stefan Gernhardt , Haoren Zhuang , Ulrich Egger
- 主分类号: H01L21/02
- IPC分类号: H01L21/02 ; H01L21/00
摘要:
A device and method for fabricating a device comprises forming a substrate and forming a contact plug through the substrate. A first electrode is formed on the substrate and a dielectric layer is formed on the first electrode. A second electrode is formed on the ferroelectric layer and an interlayer dielectric layer is applied to the second electrode and exposed surfaces of the first electrode and the ferroelectric layer. The interlayer dielectric layer is subjected to a chemical mechanical polishing process to expose a surface of the second electrode and a metal layer is deposited onto the polished interlayer dielectric layer and the exposed surface of the second electrode. The metal layer is then etched to provide an interconnection pattern to the second electrode.
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