发明申请
- 专利标题: Semiconductor layer formation
- 专利标题(中): 半导体层形成
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申请号: US10919784申请日: 2004-08-17
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公开(公告)号: US20050070057A1公开(公告)日: 2005-03-31
- 发明人: Chun-Li Liu , Mariam Sadaka , Alexander Barr , Bich-Yen Nguyen , Voon-Yew Thean , Shawn Thomas , Ted White , Qianghua Xie
- 申请人: Chun-Li Liu , Mariam Sadaka , Alexander Barr , Bich-Yen Nguyen , Voon-Yew Thean , Shawn Thomas , Ted White , Qianghua Xie
- 主分类号: H01L
- IPC分类号: H01L20060101 ; H01L21/00 ; H01L21/338
摘要:
A process for forming strained semiconductor layers. The process include flowing a chlorine bearing gas (e.g. hydrogen chloride, chlorine, carbon tetrachloride, and trichloroethane) over the wafer while heating the wafer. In one example, the chorine bearing gas is flowed during a condensation process on a semiconductor layer that is used as a template layer for forming a strain semiconductor layer (e.g. strain silicon). In other examples, the chlorine bearing gas is flowed during a post bake of the wafer after the condensation operation.
公开/授权文献
- US07056778B2 Semiconductor layer formation 公开/授权日:2006-06-06