发明申请
- 专利标题： Method of making relaxed silicon-germanium on insulator via layer transfer with stress reduction
- 专利标题（中）： 通过层压转移在绝缘体上制备松弛硅锗的方法
-
申请号： US10677005申请日： 2003-09-30
-
公开(公告)号： US20050070115A1公开(公告)日： 2005-03-31
- 发明人: Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
- 申请人： Jer-Shen Maa , Jong-Jan Lee , Douglas Tweet , Sheng Hsu
- 专利权人： Sharp Laboratories of America, Inc.
- 当前专利权人： Sharp Laboratories of America, Inc.
- 主分类号： H01L21/20
- IPC分类号： H01L21/20 ; H01L21/302 ; H01L21/461 ; H01L21/762
摘要：
A method of forming a silicon-germanium layer on an insulator includes depositing a layer of silicon-germanium on a silicon substrate to form a silicon/silicon-germanium portion; implanting hydrogen ions into the silicon substrate between about 500 Å to 1 μm below a silicon-germanium/silicon interface; bonding the silicon/silicon-germanium portion to an insulator substrate to form a couplet; thermally annealing the couplet in a first thermal annealing step to split the couplet; patterning and etching the silicon-germanium-on-insulator portion to remove portions of the silicon and SiGe layers; etching the silicon-germanium-on-insulator portion to remove the remaining silicon layer; thermally annealing the silicon-germanium-on-insulator portion in a second annealing step to relaxed the SiGe layer; and depositing a layer of strained silicon about the SiGe layer.
公开/授权文献
信息查询
IPC分类:
