Masters for imprint processes are produced by providing a resist layer, and patterning the resist layer after a respective mold pattern to produce a patterned resist layer adapted to be directly used as a master for imprint lithography. Preferably the resist is spin cast on a substrate and is comprised of a photoresist, such as negative-tone, electron-beam sensitive resist having a glass transition temperature above 200° C. and adapted to be mechanically stable to pressures up to 104 psi. Preferably, the resist is a polymer resist, such as an epoxy resist e.g. SU8 and SU8-2000. Patterning the resist layer includes the steps of structuring the resist layer, soft-baking the structured resist layer in order to selectively cross-link the structured portion of the structured resist layer and developing the structured resist layer in order to receive a patterned resist layer. The patterned resist layer is preferably cured e.g. by hard-bake curing in order to increase at least one of the mechanical stability and the glass transition temperature of said patterned resist layer. Structuring may be performed by optical lithography or electron beam lithography.