发明申请
- 专利标题: Enhancing photoresist performance using electric fields
- 专利标题(中): 使用电场增强光致抗蚀剂性能
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申请号: US10679816申请日: 2003-10-06
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公开(公告)号: US20050074706A1公开(公告)日: 2005-04-07
- 发明人: Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar Ramachandrarao
- 申请人: Robert Bristol , Heidi Cao , Manish Chandhok , Robert Meagley , Vijayakumar Ramachandrarao
- 主分类号: G03F1/14
- IPC分类号: G03F1/14 ; G03F7/09 ; G03F7/11 ; G03F7/16 ; G03F7/20 ; G03F7/30 ; G03F7/38 ; G03F7/00
摘要:
Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
公开/授权文献
- US07374867B2 Enhancing photoresist performance using electric fields 公开/授权日:2008-05-20
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