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公开(公告)号：US20050074706A1
公开(公告)日：2005-04-07
申请号：US10679816
申请日：2003-10-06
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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公开(公告)号：US20080220380A1
公开(公告)日：2008-09-11
申请号：US12075703
申请日：2008-03-13
IPC分类号： G03F7/20
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
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公开(公告)号：US07374867B2
公开(公告)日：2008-05-20
申请号：US10679816
申请日：2003-10-06
IPC分类号： G03F7/26
CPC分类号： B82Y10/00 , B82Y40/00 , G03F1/24 , G03F7/093 , G03F7/11 , G03F7/168 , G03F7/2002 , G03F7/3007 , G03F7/38
摘要： Electric fields may be advantageously used in various steps of photolithographic processes. For example, prior to the pre-exposure bake, photoresists that have been spun-on the wafer may be exposed to an electric field to orient aggregates or other components within the unexposed photoresist. By aligning these aggregates or other components with the electric field, line edge roughness may be reduced, for example in connection with 193 nanometer photoresist. Likewise, during exposure, electric fields may be applied through uniquely situated electrodes or using a radio frequency coil. In addition, electric fields may be applied at virtually any point in the photolithography process by depositing a conductive electrode, which is subsequently removed during development. Finally, electric fields may be applied during the developing process to improve line edge roughness.
摘要翻译： 电场可以有利地用于光刻工艺的各个步骤。 例如，在预曝光烘烤之前，已经旋涂在晶片上的光致抗蚀剂可以暴露于电场以取向未曝光的光致抗蚀剂内的聚集体或其它组分。 通过将这些聚集体或其它组分与电场对准，可以减少线边缘粗糙度，例如与193纳米光致抗蚀剂结合。 同样地，在曝光期间，可以通过独特的电极或使用射频线圈施加电场。 此外，可以通过沉积导电电极在光刻工艺中的几乎任何点处施加电场，导电电极随后在显影期间被去除。 最后，可以在显影过程中施加电场以改善线边缘粗糙度。
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4.发明申请Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method 有权降低EUV光致抗蚀剂对根据该方法形成的带外辐射和EUV光致抗蚀剂敏感性的方法公开(公告)号：US20060223000A1
公开(公告)日：2006-10-05
申请号：US11093889
申请日：2005-03-29
申请人： Manish Chandhok , Wang Yueh , Heidi Cao
发明人： Manish Chandhok , Wang Yueh , Heidi Cao
IPC分类号： G03C1/00
CPC分类号： G03F7/0392 , G03F7/2004
摘要： A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
摘要翻译： 改进的EUV光致抗蚀剂和制造抗蚀剂的方法。 改性抗蚀剂包括EUV光致抗蚀剂和结合到EUV光致抗蚀剂中的LAM。
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公开(公告)号：US20240219842A1
公开(公告)日：2024-07-04
申请号：US10956321
申请日：2004-09-30
申请人： Manish Chandhok , Wang Yueh , Heidi Cao
发明人： Manish Chandhok , Wang Yueh , Heidi Cao
摘要： Numerous embodiments of a method for developing a photoresist material are described. In one embodiment of the present invention, a photoresist layer is disposed over a substrate. The photoresist layer has a bulk region to form a first region and a second region. A photoresist developer made of a tetra-alkyl ammonium hydroxide compound is applied to the photoresist layer to react only with substantial portions of the first region and to prevent penetration of the developer solution into the bulk portion near the second region.
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6.发明申请Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists 有权低脱气和非交联系列聚合物，用于EUV负色光致抗蚀剂公开(公告)号：US20050147916A1
公开(公告)日：2005-07-07
申请号：US10750042
申请日：2003-12-30
申请人： Wang Yueh , Heidi Cao , Manish Chandhok
发明人： Wang Yueh , Heidi Cao , Manish Chandhok
CPC分类号： G03F7/0382
摘要： A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.
摘要翻译： 这里描述了不基于交联化学的化学放大负色调光致抗蚀剂的串联结构。 光致抗蚀剂可以包括：与环烯共聚的第一芳族结构，其中环烯被二醇官能化。 光致抗蚀剂还可以包括光酸产生剂（PAG）。 当至少一部分负色调光致抗蚀剂暴露于光（EUV或UV辐射）时，PAG释放酸，其与官能化二醇反应以重排成酮或醛。 那么新的酮或醛在显影剂溶液中的溶解性较差，产生负色调光致抗蚀剂。
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7.发明授权Method of reducing sensitivity of EUV photoresists to out-of-band radiation and EUV photoresists formed according to the method 有权降低EUV光致抗蚀剂对根据该方法形成的带外辐射和EUV光致抗蚀剂敏感性的方法公开(公告)号：US07459260B2
公开(公告)日：2008-12-02
申请号：US11093889
申请日：2005-03-29
申请人： Manish Chandhok , Wang Yueh , Heidi Cao
发明人： Manish Chandhok , Wang Yueh , Heidi Cao
CPC分类号： G03F7/0392 , G03F7/2004
摘要： A modified EUV photoresist and a method of making the resist. The modified resist includes an EUV photoresist and a LAM incorporated into the EUV photoresist.
摘要翻译： 改进的EUV光致抗蚀剂和制造抗蚀剂的方法。 改性抗蚀剂包括EUV光致抗蚀剂和结合到EUV光致抗蚀剂中的LAM。
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8.发明授权Low outgassing and non-crosslinking series of polymers for EUV negative tone photoresists 有权低脱气和非交联系列聚合物，用于EUV负色光致抗蚀剂公开(公告)号：US07442487B2
公开(公告)日：2008-10-28
申请号：US10750042
申请日：2003-12-30
申请人： Wang Yueh , Heidi Cao , Manish Chandhok
发明人： Wang Yueh , Heidi Cao , Manish Chandhok
CPC分类号： G03F7/0382
摘要： A series structure of a chemically amplified negative tone photoresist that is not based on cross-linking chemistry is herein described. The photoresist may comprise: a first aromatic structure copolymerized with a cycloolefin, wherein the cycloolefin is functionalized with a di-ol. The photoresist may also include a photo acid generator (PAG). When at least a portion of the negative tone photoresist is exposed to light (EUV or UV radiation), the PAG releases an acid, which reacts with the functionalized di-ol to rearrange into a ketone or aldehyde. Then new ketone or aldehyde is less soluble in developer solution, resulting in a negative tone photoresist.
摘要翻译： 这里描述了不基于交联化学的化学放大负色调光致抗蚀剂的串联结构。 光致抗蚀剂可以包括：与环烯共聚的第一芳族结构，其中环烯被二醇官能化。 光致抗蚀剂还可以包括光酸产生剂（PAG）。 当至少一部分负色调光致抗蚀剂暴露于光（EUV或UV辐射）时，PAG释放酸，其与官能化的二醇反应以重排成酮或醛。 那么新的酮或醛在显影剂溶液中的溶解性较差，产生负色调光致抗蚀剂。
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公开(公告)号：US20060046206A1
公开(公告)日：2006-03-02
申请号：US10927885
申请日：2004-08-27
IPC分类号： G03F7/00
CPC分类号： G03F7/40
摘要： A cap may be formed anisotropically over a photoresist feature. For example, a material, such as a polymer, may be coated over the photoresist feature. If the coated material is photoactive, the cap may be grown preferentially in the vertical direction, creating high aspect ratio structures in some embodiments of the present invention.
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公开(公告)号：US20060093972A1
公开(公告)日：2006-05-04
申请号：US11293594
申请日：2005-12-02
申请人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
发明人： Michael Goldstein , Manish Chandhok , Eric Panning , Robert Bristol , Bryan Rice
IPC分类号： G03F7/00
摘要： In an implementation, energy reaching the lower surface of a photoresist may be redirected back into the photoresist material. This may be done by, for example, reflecting and/or fluorescing the energy from a hardmask provided on the wafer surface back into the photoresist.
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