发明申请
- 专利标题: Thin film transistor array substrate and method of fabricating the same
- 专利标题(中): 薄膜晶体管阵列基板及其制造方法
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申请号: US10958260申请日: 2004-10-06
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公开(公告)号: US20050077516A1公开(公告)日: 2005-04-14
- 发明人: Byoung Lim , Hyun Seo , Heung Cho , Hong Kim
- 申请人: Byoung Lim , Hyun Seo , Heung Cho , Hong Kim
- 专利权人: LG. Philips LCD Co., Ltd.
- 当前专利权人: LG. Philips LCD Co., Ltd.
- 优先权: KRP2003-70836 20031011; KRP2003-90285 20031211
- 主分类号: G02F1/1362
- IPC分类号: G02F1/1362 ; H01L21/336 ; H01L21/77 ; H01L21/84 ; H01L27/12 ; H01L29/04
摘要:
A thin film transistor array substrate device includes a gate line formed on a substrate, a data line crossing the gate line with a gate insulating pattern position therebetween, a thin film transistor at a crossing of the gate line and the data line, a pixel electrode formed at a pixel region defined by the crossing of the gate line and the data line and connected to the thin film transistor, a gate pad part having a lower gate pad electrode connected to the gate line and an upper gate pad electrode connected to the lower gate pad electrode, a data pad part having a lower data pad electrode connected to the date line and an upper data pad electrode connected to the lower data pad electrode, and a passivation film pattern formed at a region besides the region including the pixel electrode, the upper data pad electrode, and the upper gate pad electrode, wherein the pixel electrode is formed on the gate insulating pattern of the pixel region exposed by the passivation film pattern.
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