A structure and associated method for protecting an electrical structure during a fuse link deletion by focused radiation. The structure comprises a fuse element, a protection plate, a first dielectric layer, and a second dielectric layer. The structure is formed within a semiconductor device. The protection plate is formed within the first dielectric layer using a damascene process. The second dielectric layer is formed over the protection plate and the first dielectric layer. The fuse element is formed over the second dielectric layer. The fuse element is adapted to be cut with a laser beam. The dielectric constant of the second dielectric layer is greater than the dielectric constant of the first dielectric layer. The protection plate is adapted to shield the first dielectric layer from energy from the laser beam.