发明申请
- 专利标题: Semiconductor device
- 专利标题(中): 半导体器件
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申请号: US10917374申请日: 2004-08-13
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公开(公告)号: US20050078495A1公开(公告)日: 2005-04-14
- 发明人: Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- 申请人: Jun Koyama , Takeshi Osada , Takanori Matsuzaki
- 申请人地址: JP Atsugi-shi
- 专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人: Semiconductor Energy Laboratory Co., Ltd.
- 当前专利权人地址: JP Atsugi-shi
- 优先权: JP2003-310767 20030902
- 主分类号: H01L27/12
- IPC分类号: H01L27/12 ; H02M5/42 ; H02M7/217
摘要:
A rectifier circuit configured with a conventional configuration using an operational amplifier and a diode by a thin film transistor over an insulating substrate cannot exhibit the performance of a rectifier circuit due to the low stability of operational amplifier and the low high-frequency characteristic. Therefore, the rectifier circuit requires to be configured by using an IC outside of the insulating substrate in order to rectify a high-frequency signal. According to the invention, an amplifier circuit and a waveform shaping circuit are configured with a thin film transistor and a non-rectified signal is switched by a signal thereof, so that a rectifier circuit with the excellent high-frequency characteristic can be realized.
公开/授权文献
- US07199637B2 Rectifier circuit without alternating-current feedback 公开/授权日:2007-04-03
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