Invention Application
- Patent Title: Method of controlling polysilicon crystallization
- Patent Title (中): 控制多晶硅结晶的方法
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Application No.: US10772511Application Date: 2004-02-05
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Publication No.: US20050079294A1Publication Date: 2005-04-14
- Inventor: Jia-Xing Lin , Chi-Lin Chen , Yu-Cheng Chen , Yih-Rong Luo
- Applicant: Jia-Xing Lin , Chi-Lin Chen , Yu-Cheng Chen , Yih-Rong Luo
- Priority: TW92128469 20031014
- Main IPC: B05D5/12
- IPC: B05D5/12 ; C30B13/24 ; C30B29/06 ; H01L21/20 ; H01L21/336 ; H01L21/77 ; H01L29/04 ; H01L29/786
Abstract:
A heat sink layer is formed on portions of a substrate, and then an amorphous silicon layer is formed thereon. The heat coefficient of the heat sink layer is greater than that of the substrate. When an excimer laser heats the amorphous silicon layer to crystallize the amorphous silicon, nucleation sites are formed in the amorphous silicon layer on the heat sink layer. Next, laterally expanding crystallization occurs in the amorphous silicon layer on the substrate to form polysilicon having a crystal size of a micrometer.
Public/Granted literature
- US07435667B2 Method of controlling polysilicon crystallization Public/Granted day:2008-10-14
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