发明申请
- 专利标题： Semiconductor device and production method therefor
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10503350申请日： 2003-02-05
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公开(公告)号： US20050079667A1公开(公告)日： 2005-04-14
- 发明人: Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
- 申请人： Tomio Iwasaki , Norio Ishitsuka , Hideo Miura
- 优先权： JP2002-55174 20020301; JP2002-284713 20020930
- 国际申请： PCT/JP03/01183 WO 20030205
- 主分类号： H01L21/265
- IPC分类号： H01L21/265 ; H01L21/336 ; H01L21/8244 ; H01L21/8247 ; H01L27/11 ; H01L27/115 ; H01L29/49 ; H01L29/78 ; H01L29/788 ; H01L29/792 ; H01L21/425 ; H01L21/8234 ; H01L21/8238 ; H01L29/76 ; H01L29/94
摘要：
A semiconductor device having a high degree of reliability is provided. A second object of the invention is to provide a semiconductor device of high yield. The semiconductor includes a silicon substrate, a gate dielectric film formed on one main surface of the silicon substrate, a gate electrode formed by being stacked on the gate dielectric film and a diffusion layer containing arsenic and phosphorus. Both of the concentration of the highest concentration portion of arsenic and the concentration of the highest concentration portion of phosphorus are each at 1026 atoms/m3 or more and 1027 atoms/m3 or less, and the depth of the highest concentration portion of phosphorus from the surface of the silicon substrate is less than the depth of the highest concentration portion of arsenic.
公开/授权文献
- US07141840B2 Semiconductor device and production method therefor 公开/授权日：2006-11-28
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