- 专利标题： Trench isolation employing a high aspect ratio trench
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申请号： US10683668申请日： 2003-10-10
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公开(公告)号： US20050079730A1公开(公告)日： 2005-04-14
- 发明人: Jochen Beintner , Andreas Knorr
- 申请人： Jochen Beintner , Andreas Knorr
- 申请人地址： US CA San Jose
- 专利权人： Infineon Technologies North America Corp.
- 当前专利权人： Infineon Technologies North America Corp.
- 当前专利权人地址： US CA San Jose
- 主分类号： H01L21/31
- IPC分类号： H01L21/31 ; H01L21/76 ; H01L21/762
摘要：
An isolation trench formed in a semiconductor substrate and is filled with at least one insulating liner layer that is deposited along sidewalls and a bottom region of the isolation trench and with at least one silicon liner layer that is deposited atop the insulating liner layer. An upper portion of the insulating liner layers are removed, and the silicon liner layers are removed. A remaining portion of the trench is filled with another insulating layer.
公开/授权文献
- US06933206B2 Trench isolation employing a high aspect ratio trench 公开/授权日：2005-08-23
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