发明申请
- 专利标题： Semiconductor device and method for fabricating the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US10972442申请日： 2004-10-26
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公开(公告)号： US20050082571A1公开(公告)日： 2005-04-21
- 发明人: Teruhito Ohnishi , Akira Asai
- 申请人： Teruhito Ohnishi , Akira Asai
- 申请人地址： JP Osaka
- 专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人： MATSUSHITA ELECTRIC INDUSTRIAL CO., LTD.
- 当前专利权人地址： JP Osaka
- 优先权： JP2000-140292 20000512
- 主分类号： H01L29/73
- IPC分类号： H01L29/73 ; H01L21/331 ; H01L21/8222 ; H01L21/8248 ; H01L21/8249 ; H01L27/06 ; H01L29/165 ; H01L29/732 ; H01L29/737 ; H01L29/739
摘要：
A Si1-xGex layer 111b functioning as the base composed of an i-Si1-xGex layer and a p+ Si1-xGex layer is formed on a collector layer 102, and a Si cap layer 111a as the emitter is formed on the p+ Si1-xGex layer. An emitter lead electrode 129, which is composed of an n− polysilicon layer 129b containing phosphorus in a concentration equal to or lower than the solid-solubility limit for single-crystal silicon and a n+ polysilicon layer 129a containing phosphorus in a high concentration, is formed on the Si cap layer 111a in a base opening 118. The impurity concentration distribution in the base layer is properly maintained by suppressing the Si cap layer 111a from being doped with phosphorus (P) in an excessively high concentration. The upper portion of the Si cap layer 111a may contain a p-type impurity. The p-type impurity concentration distribution in the base layer of an NPN bipolar transistor is thus properly maintained.
公开/授权文献
- US07049681B2 Bipolar transistor device having phosphorous 公开/授权日：2006-05-23
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