- 专利标题: Manufacturing methods of MEMS device
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申请号: US10961162申请日: 2004-10-12
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公开(公告)号: US20050085000A1公开(公告)日: 2005-04-21
- 发明人: Koichi Ikeda , Takashi Kinoshita
- 申请人: Koichi Ikeda , Takashi Kinoshita
- 专利权人: Sony Corporation
- 当前专利权人: Sony Corporation
- 优先权: JPP2001-394881 20011226
- 主分类号: B81C1/00
- IPC分类号: B81C1/00 ; B81B3/00 ; H01L21/00
摘要:
The present invention is directed to manufacturing methods of electrostatic type MEMS devices. The manufacturing method of the present invention includes the steps of forming a substrate side electrode on a substrate, forming a fluid film before or after forming a sacrificial layer, further forming a beam having a driving side electrode on a planarized surface of the fluid film, and finally, removing the sacrificial layer. Furthermore, performing the foregoing method planarizes the surface of a driving side electrode, reduces fluctuations in the shape of a beam, and improves the performance and the uniformity of the MEMS device.
公开/授权文献
- US06946315B2 Manufacturing methods of MEMS device 公开/授权日:2005-09-20
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