Invention Application
- Patent Title: Plasma processing apparatus and method
- Patent Title (中): 等离子体处理装置及方法
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Application No.: US11001059Application Date: 2004-12-02
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Publication No.: US20050087305A1Publication Date: 2005-04-28
- Inventor: Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
- Applicant: Ryoji Nishio , Ken Yoshioka , Saburou Kanai , Tadamitsu Kanekiyo , Hideki Kihara , Koji Okuda
- Main IPC: C23C16/44
- IPC: C23C16/44 ; C23C16/455 ; C23C16/458 ; C23C16/507 ; H01J37/32 ; H01L21/00 ; H01L21/306

Abstract:
A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.
Public/Granted literature
- US07740739B2 Plasma processing apparatus and method Public/Granted day:2010-06-22
Information query
IPC分类: