公开(公告)号：US07740739B2

公开(公告)日：2010-06-22

申请号：US11001059

申请日：2004-12-02

Applicant: Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

Abstract translation: 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。

公开(公告)号：US20090078375A1

公开(公告)日：2009-03-26

申请号：US12324125

申请日：2008-11-26

Applicant: Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: C23F1/00

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

Abstract translation: 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

公开(公告)号：US07138606B2

公开(公告)日：2006-11-21

申请号：US10658281

申请日：2003-09-10

Applicant: Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

Inventor： Seiichiro Kanno ,  Ken Yoshioka ,  Ryoji Nishio ,  Saburou Kanai ,  Hideki Kihara ,  Koji Okuda

IPC: F27B5/14

CPC classification number: H01L21/67109 ,  H01L21/6831

Abstract: A wafer processing method for use with a wafer processing apparatus having a liquid cooling jacket with a built-in coolant liquid circulation path and a ceramic plate as attached onto the liquid cooling jacket and having therein a heater and an electrode for an electrostatic chuck. The method enables performance of wafer processing while letting a wafer be mounted on the ceramic plate by a wafer transport. The method includes causing the wafer transport to transport the wafer onto the ceramic plate, pre-heating the wafer while the wafer is held on the ceramic plate for a predetermined length of time, and mounting the preheated wafer on the ceramic plate.

Abstract translation: 一种与具有内置冷却剂液体循环路径的液体冷却套和安装在液体冷却套上的陶瓷板的晶片处理装置一起使用的晶片处理方法，其中具有加热器和用于静电卡盘的电极。 该方法能够通过晶片输送将晶片安装在陶瓷板上，从而实现晶片处理。 该方法包括使晶片输送将晶片输送到陶瓷板上，在将晶片保持在陶瓷板上预定时间长度的同时预热晶片，并将预热的晶片安装在陶瓷板上。

公开(公告)号：US20050087305A1

公开(公告)日：2005-04-28

申请号：US11001059

申请日：2004-12-02

Applicant: Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: C23C16/44 ,  C23C16/455 ,  C23C16/458 ,  C23C16/507 ,  H01J37/32 ,  H01L21/00 ,  H01L21/306

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a gas ring forming a portion of a vacuum processing chamber and having a blowing port for a processing gas, a bell jar to define a vacuum processing chamber, an antenna for supplying an RF electric field into the vacuum processing chamber to form plasmas, a sample table, a Faraday shield, and a deposition preventive plate attached detachably at least to the inner surface of the gas ring excluding the blowing port. An area of the inner surface of the gas ring including the deposition preventive plate that can be viewed from the sample surface is set to about ½ or more of the area of the sample. A susceptor made of a dielectric material covers the outer surface and the outer lateral side of the sample table. A metal film is disposed with respect to the susceptor, and an RF voltage is applied to the metal film.

Abstract translation: 等离子体处理装置包括形成真空处理室的一部分并具有用于处理气体的吹出口的气环，用于限定真空处理室的钟罩，用于将真空处理室中的RF电场提供给天线的天线 形成等离子体，样品台，法拉第屏蔽和至少可拆卸地附接到除了吹出口之外的气体环的内表面的防沉积板。 将从样品表面观察的包括防沉积板的气体环的内表面的面积设定为样品面积的约1/2或更多。 由介电材料制成的基座覆盖样品台的外表面和外侧。 相对于基座设置金属膜，向金属膜施加RF电压。

公开(公告)号：US5237518A

公开(公告)日：1993-08-17

申请号：US602945

申请日：1990-10-27

Applicant: Janos Sztipanovits ,  Csaba Biegl ,  Gabor Karsai ,  Samir Padalkar ,  Nobuji Miyasaka ,  Koji Okuda

Inventor： Janos Sztipanovits ,  Csaba Biegl ,  Gabor Karsai ,  Samir Padalkar ,  Nobuji Miyasaka ,  Koji Okuda

IPC: G05B23/02 ,  G06F19/00 ,  G08B29/14

CPC classification number: G05B23/0297 ,  G05B23/0248 ,  G08B29/14 ,  G05B2219/24063 ,  G05B2219/24064 ,  G05B2219/24065 ,  G05B2219/24085 ,  Y10S706/911

Abstract: An optimization method is used in a real-time diagnostic system that monitors alarm sources and detects possible sources of failure in an industrial process. When the diagnostic system detects one or more alarms, it determines which components are likely sources of failure. The system determines the level of criticality of certain other, currently off-line, alarms sources and schedules the off-line alarms for evaluation according to their levels of criticality. The system refines its analysis of likely sources of failure by evaluating the status of the previously off-line alarm sources Those previously off-line alarm sources are added to the grouping of possible sources of failure prior to repeating the evaluation process. The evaluation process is repeated, with the analysis of likely causes of failure being continually refined.

公开(公告)号：US08795467B2

公开(公告)日：2014-08-05

申请号：US12575514

申请日：2009-10-08

Applicant: Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: H01L21/306 ,  C23C16/00

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing apparatus includes a sample stage disposed at a lower part of a processing chamber, a bell jar made of an insulative material constituting an upper portion of a vacuum vessel, a coil antenna disposed outside and around the bell jar to which electric power is supplied so as to generate the plasma in a plasma generating space inside of the bell jar, and a Faraday shield mounted on the bell jar and disposed between an external surface of the bell jar and the coil antenna. A ring shaped member made of an electric conductive material is disposed inside of an inner surface of a ring portion of the processing chamber located below a skirt portion of the bell jar and constitutes a part of the processing chamber. The ring shaped member extends upwardly so as to cover a portion of an inner surface of the bell jar.

Abstract translation: 等离子体处理装置包括设置在处理室的下部的样品台，由构成真空容器的上部的绝缘材料制成的钟罩，设置在电筒的外部和周围的线圈天线 被提供以在钟罩内部的等离子体产生空间中产生等离子体，以及安装在钟罩上并设置在钟罩的外表面和线圈天线之间的法拉第屏蔽。 由导电材料制成的环形构件设置在位于钟罩的裙部下方的处理室的环形部分的内表面的内侧，并构成处理室的一部分。 环形构件向上延伸以覆盖钟罩的内表面的一部分。

公开(公告)号：US08062473B2

公开(公告)日：2011-11-22

申请号：US12324125

申请日：2008-11-26

Applicant: Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji Nishio ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: C23C16/00 ,  H01L21/306

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing apparatus includes in a processing chamber, a sample stage, a bell jar, a coil antenna, a Faraday shield, and a gas ring member located below a skirt portion of the bell jar and above the sample stage. The gas ring member supplies a process gas to a plasma generating space inside the bell jar from a gas port disposed on an inner surface of the gas ring member. A ring shaped plate is disposed near a periphery of the Faraday shield and having an inner surface facing and covering along the inner surface of the gas ring member and being spaced from the inner surface of the gas ring member so as to delimit a gap therebetween.

Abstract translation: 等离子体处理装置包括处理室，样品台，钟罩，线圈天线，法拉第屏蔽和位于钟罩的裙部下方并位于样品台上方的气环构件。 气环构件从设置在气环构件的内表面上的气体端口向钟罩内的等离子体产生空间提供处理气体。 环形板设置在法拉第罩的周边附近，并且具有面向气体环构件的内表面的内表面并且与气环构件的内表面间隔开，以限定其间的间隙。

公开(公告)号：US20080011716A1

公开(公告)日：2008-01-17

申请号：US11778780

申请日：2007-07-17

Applicant: Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

Inventor： Ryoji NISHIO ,  Ken Yoshioka ,  Saburou Kanai ,  Tadamitsu Kanekiyo ,  Hideki Kihara ,  Koji Okuda

IPC: C23F1/00

CPC classification number: C23C16/4558 ,  C23C16/4404 ,  C23C16/45591 ,  C23C16/4581 ,  C23C16/507 ,  H01J37/321 ,  H01J37/3244 ,  H01J37/32477 ,  H01J37/32495 ,  H01J37/32697 ,  H01L21/67069

Abstract: A plasma processing method for a plasma processing apparatus which includes, a gas ring, a bell jar, an antenna, a sample table, a Faraday shield, and an RF power source circuit for supplying a power source voltage to the antenna and the Faraday shield. The RF power source circuit includes an RF power source, an antenna connected with the RF power source, a resonance circuit connected in series with the antenna and supplying a resonance voltage, a detection circuit for detecting the resonance voltage of the resonance circuit, and a comparator circuit for comparing the resonance voltage detected by the detection circuit with a predetermined set value. A constant of the resonance circuit is changed based on the result of comparison by the comparison circuit.

Abstract translation: 一种等离子体处理装置的等离子体处理方法，包括气体环，钟罩，天线，样品台，法拉第屏蔽和用于向天线和法拉第屏蔽提供电源电压的RF电源电路 。 RF电源电路包括RF电源，与RF电源连接的天线，与天线串联连接并提供谐振电压的谐振电路，用于检测谐振电路的谐振电压的检测电路，以及 比较器电路，用于将由检测电路检测的谐振电压与预定设定值进行比较。 谐振电路的常数根据比较电路的比较结果而改变。

公开(公告)号：US5272034A

公开(公告)日：1993-12-21

申请号：US913051

申请日：1992-07-14

Applicant: Nobuaki Kawano ,  Nobuyuki Tsuji ,  Takatomo Fukumoto ,  Kaoru Tanaka ,  Masanori Fujii ,  Atsushi Yamaguchi ,  Kazuhiko Fujii ,  Koji Okuda

Inventor： Nobuaki Kawano ,  Nobuyuki Tsuji ,  Takatomo Fukumoto ,  Kaoru Tanaka ,  Masanori Fujii ,  Atsushi Yamaguchi ,  Kazuhiko Fujii ,  Koji Okuda

IPC: G03G9/08 ,  G03G9/00 ,  G03G9/09 ,  G03G9/097

CPC classification number: G03G9/0817 ,  G03G9/081

Abstract: In accordance with the present invention, the electrophotographic toner is produced by dispersing and mixing toner components containing a fixing resin, a coloring agent and an electric charge controlling dye, and by melting and kneading the resulting mixture, which is then subjected to pulverizing and classifying. According to the present invention, fine powder generated at the pulverizing and classifying steps is reused as added to a mixture of toner components as already dispersed and mixed at the dispersing and mixing step, and the surface dye density of the electric charge controlling dye is in the range from 1.0.times.10.sup.-3 to 1.7.times.10.sup.-3 g/g, or the rate of the amount of an electric charge controlling dye present on the surfaces of toner particles to the total amount of the electric charge controlling dye, is in the range from 10 to 27% by weight. Even though repeatedly used for a long period of time, the electrophotographic toner does not lower the developer in electric charging characteristics. Further, by adding the fine powder to the mixture as already dispersed and mixed at the dispersing and mixing step, there can be efficiently produced a fine-powder regenerated toner excellent in transfer efficiency, resolution and gradation.

公开(公告)号：US20100163185A1

公开(公告)日：2010-07-01

申请号：US12379642

申请日：2009-02-26

Applicant: Michiaki Kobayashi ,  Tsutomu Nakamura ,  Koji Okuda ,  Masakazu Isozaki

Inventor： Michiaki Kobayashi ,  Tsutomu Nakamura ,  Koji Okuda ,  Masakazu Isozaki

IPC: H01L21/3065

CPC classification number: H01L21/67196

Abstract: A vacuum processing apparatus which includes a vacuum vessel having a processing chamber provided therein into which a processing gas is supplied to form a plasma and which processes a wafer located in the processing chamber, and a vacuum transfer vessel having a vacuumed transfer chamber coupled with the vacuum vessel provided therein into which the wafer is transferred. A resin-made film having a plasma resistance is bonded onto a surface of a lid of the vacuum transfer vessel on the side of the transfer chamber.

Abstract translation: 一种真空处理装置，其特征在于，具备：设置有处理室的真空容器，在所述真空容器内设置处理气体，形成等离子体，处理位于所述处理室内的晶片;以及真空转移容器， 其中设置有晶片被转移到其中的真空容器。 将具有耐等离子体电阻的树脂膜粘合到转印室一侧的真空转印容器的盖的表面上。