Invention Application
- Patent Title: Fabrication method of semiconductor integrated circuit device
- Patent Title (中): 半导体集成电路器件的制造方法
-
Application No.: US10996464Application Date: 2004-11-26
-
Publication No.: US20050087493A1Publication Date: 2005-04-28
- Inventor: Osamu Takahashi , Kunio Ogasawara
- Applicant: Osamu Takahashi , Kunio Ogasawara
- Priority: JP2001-335371 20011031
- Main IPC: H01L21/8247
- IPC: H01L21/8247 ; C02F9/00 ; H01L21/304 ; H01L21/306 ; H01L21/8234 ; H01L27/10 ; H01L27/115 ; H01L29/788 ; H01L29/792 ; B01D61/00

Abstract:
A method of fabrication of a semiconductor integrated circuit device, calls for disposing, in an ultrapure water preparing system, UF equipment having therein a UF module which has been manufactured by disposing, in a body thereof, a plurality of capillary hollow fiber membranes composed of a polysulfone membrane or polyimide membrane, bonding the plurality of hollow fiber membranes at end portions thereof by hot welding, and by this hot welding, simultaneously adhering the hollow fiber membranes to the body. Upon preparation of ultrapure water to be used for the fabrication of the semiconductor integrated circuit device, it is possible to prevent run-off of ionized amine into the ultrapure water.
Public/Granted literature
- US07015119B2 Fabrication method of semiconductor integrated circuit device Public/Granted day:2006-03-21
Information query