发明申请
US20050087687A1 Ultra sensitive silicon sensor millimeter wave passive imager 有权
超灵敏的硅传感器毫米波被动成像仪

  • 专利标题: Ultra sensitive silicon sensor millimeter wave passive imager
  • 专利标题(中): 超灵敏的硅传感器毫米波被动成像仪
  • 申请号: US10689720
    申请日: 2003-10-22
  • 公开(公告)号: US20050087687A1
    公开(公告)日: 2005-04-28
  • 发明人: Nathan Bluzer
  • 申请人: Nathan Bluzer
  • 主分类号: G01J5/20
  • IPC分类号: G01J5/20 H01L25/00
Ultra sensitive silicon sensor millimeter wave passive imager
摘要:
Electro-thermal feedback is utilized for zeroing the thermal conductance between a bolometer type detector element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing of the thermal conductance associated with the mechanical support and electrical readout interconnect structures is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage by the heating effect of a bipolar transistor amplifier circuit so that the temperature across the mechanical support and electrical interconnects structures are zeroed thereby greatly improving the thermal isolation, the responsivity and sensitivity of the electromagnetic radiation sensor.
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