公开(公告)号：US09029750B1

公开(公告)日：2015-05-12

申请号：US13196603

申请日：2011-08-02

Applicant: Nathan Bluzer

Inventor： Nathan Bluzer

IPC: H01L27/04 ,  H01L29/78 ,  H01L27/02

CPC classification number: H01L27/04 ,  H01L27/0251 ,  H01L27/14603 ,  H01L27/14612 ,  H01L27/14812 ,  H04N5/363

Abstract: A high sensitivity, high speed, and low noise, semiconductor non-destructive read-out (NDRO) device (700) for the conversion of a generated signal charge (110) into an output voltage having provisions for charge integration, charge transfer, and nondestructive charge read-out without kTC reset noise. The read-out device (700) includes charge sensing potential wells (520), a MOSFET having a gate (705), a source (145), and a drain (720), a feedback amplifier (305), a current generator (310), a reset gate (650), a reset drain (530), a multiplexer gate (820), and a pair of adjacent CCD transfer gates (750 and 760). CMOS detector pixels with this NDRO form a compact structure for integrating generated charge, and high sensitivity readout, without kTC reset noise. The NDRO in CCD devices provides a fast sensitive charge to voltage transducer without kTC reset noise. Connecting several NDRO stages in series (1000) provides multiple readout of a pixel to further improve sensitivity and performance of charge to voltage transduction.

Abstract translation: 用于将产生的信号电荷（110）转换成具有用于电荷积分，电荷转移以及电荷积分的输出电压的高灵敏度，高灵敏度和低噪声半导体非破坏性读出（NDRO）器件（700） 非破坏性电荷读出，无kTC复位噪声。 读出装置（700）包括电荷感测势阱（520），具有栅极（705），源极（145）和漏极（720）的MOSFET，反馈放大器（305），电流发生器 310），复位栅极（650），复位漏极（530），多路复用器门（820）和一对相邻的CCD传输门（750和760）。 具有这种NDRO的CMOS检测器像素形成了紧凑的结构，用于集成生成的电荷和高灵敏度读出，而没有kTC复位噪声。 CCD器件中的NDRO为电压传感器提供快速敏感的电荷，无需kTC复位噪声。 串联连接多个NDRO级（1000）可提供多个像素读数，以进一步提高电压对电压传导的灵敏度和性能。

公开(公告)号：US08780418B1

公开(公告)日：2014-07-15

申请号：US13838054

申请日：2013-03-15

Applicant: Nathan Bluzer ,  Bron R. Frias ,  Paul A. Tittel

Inventor： Nathan Bluzer ,  Bron R. Frias ,  Paul A. Tittel

IPC: H04N1/04 ,  H04N1/60 ,  H04N1/024 ,  G01D18/00 ,  G06K9/20 ,  H04N5/217 ,  G01C19/00

CPC classification number: H04N5/378 ,  G01C11/025 ,  H01L27/14609 ,  H04N5/2353 ,  H04N5/353 ,  H04N5/372

Abstract: A scanning focal plane sensor and method are described for image capturing of object space (or scenes). In one example, a focal plane sensor for a scanning imaging system is provided. The focal plane sensor for a scanning imaging system includes M×N Time Delay Integration (TDI) imaging Charge Coupled Device (CCD), where M is a number of TDI columns and N is a number of TDI stages per each column. A detector is connected to each TDI stage. The focal plane sensor includes an imaging controller configured to mechanize sampling the brightness value of each sensor pixel's initial footprint in object space and select a number of charge integrating TDI stages for substantially equalizing the inter sensor pixels' signal to noise ratios.

Abstract translation: 描述了用于对象空间（或场景）的图像捕获的扫描焦平面传感器和方法。 在一个示例中，提供了用于扫描成像系统的焦平面传感器。 用于扫描成像系统的焦平面传感器包括M×N时间延迟积分（TDI）成像电荷耦合器件（CCD），其中M是多个TDI列，N是每列的TDI级数。 检测器连接到每个TDI级。 焦平面传感器包括成像控制器，其被配置为机械化对对象空间中的每个传感器像素的初始占地面积的亮度值进行采样，并选择多个电荷积分TDI级，以基本上均衡传感器像素的信噪比。

公开(公告)号：US08345134B2

公开(公告)日：2013-01-01

申请号：US12759472

申请日：2010-04-13

Applicant: Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

Inventor： Joseph T. Smith ,  Bron R. Frias ,  Paul A. Tittel ,  Robert R. Shiskowski ,  Nathan Bluzer

IPC: H04N5/335 ,  H01L27/148 ,  H01L21/00

CPC classification number: H01L29/76891 ,  H01L21/3003

Abstract: An Indium Tin Oxide (ITO) gate charge coupled device (CCD) is provided. The CCD device comprises a CCD structure having a substrate layer, an oxide layer over the substrate layer, a nitride layer over the oxide layer and a plurality of parallel ITO gates extending over the nitride layer. The CCD device further comprises a plurality of substantially similarly sized channel stop regions in the substrate layer that extend transversely relative to the ITO gates, such that a given pair of channel stop regions defining a pixel column of the CCD structure. The CCD device also comprises a plurality of vent openings that extend through the nitride layer along the plurality of substantially similarly sized channel stop regions to allow for penetration of hydrogen to at least one of the oxide layer and the substrate layer.

Abstract translation: 提供氧化铟锡（ITO）栅极电荷耦合器件（CCD）。 CCD器件包括具有衬底层，衬底层上的氧化物层，氧化物层上的氮化物层和在氮化物层上延伸的多个平行ITO栅极的CCD结构。 CCD器件还包括在衬底层中相对于ITO栅极横向延伸的多个基本相似尺寸的通道阻挡区域，使得限定CCD结构的像素列的给定的一对通道阻挡区域。 CCD装置还包括多个通气孔，其沿着多个基本类似尺寸的通道停止区域延伸穿过氮化物层，以允许氢气渗透到氧化物层和衬底层中的至少一个。

公开(公告)号：US07989249B2

公开(公告)日：2011-08-02

申请号：US12365284

申请日：2009-02-04

Applicant: Nathan Bluzer ,  Silai V. Krishnaswamy ,  Philip C. Smith

Inventor： Nathan Bluzer ,  Silai V. Krishnaswamy ,  Philip C. Smith

IPC: H01L21/00

CPC classification number: H01L31/08 ,  B81B3/0081 ,  B81B2201/0207 ,  H01L23/3121 ,  H01L31/18 ,  H01L2924/0002 ,  H01L2924/00

Abstract: A method of manufacturing a micro-electrical-mechanical system with thermally isolated active elements. Such a system may embody a bolometer, which is well suited for detecting electromagnetic radiation between 90 GHz and 30 THz while operating at room temperature. The method also discloses a generalized process for manufacturing circuitry incorporating active and passive micro-electrical-mechanical systems in a silicon wafer.

Abstract translation: 一种制造具有热隔离有源元件的微机电系统的方法。 这样的系统可以包含测辐射热计，这适用于在室温下操作时检测90GHz和30Hz之间的电磁辐射。 该方法还公开了一种用于制造在硅晶片中并入有源和无源微机电系统的电路的通用方法。

公开(公告)号：US20110180710A1

公开(公告)日：2011-07-28

申请号：US12693731

申请日：2010-01-26

Applicant: Nathan BLUZER

Inventor： Nathan BLUZER

IPC: H01L27/144 ,  H01L31/09

CPC classification number: H01L27/14649 ,  G01J5/061 ,  G01J5/20 ,  G01J5/24 ,  H01L27/14603

Abstract: Electro-thermal feedback is utilized for reducing the effective thermal conductance between the detector stage of a bolometer pixel in a thermal radiation sensor assembly and the environment through its mechanical support structure and electrical interconnects, thereby coming closer to achieving thermal conductance limited primarily through photon radiation. Minimization of the effective thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjusts the temperature of an intermediate stage and the mechanical support structure and electrical interconnects, connecting it to the detector stage, to equal the temperature of the bolometer pixel's detector stage (i.e., by active thermal isolation). Increased temperature sensitivity is preferably achieved through temperature sensing with reverse biased Schottky diodes connected in series.

Abstract translation: 电热反馈用于通过其机械支撑结构和电互连来降低热辐射传感器组件中的测辐射热计像素的检测器级与环境之间的有效热导，从而更接近实现主要通过光子辐射限制的导热 。 通过电热反馈来实现与机械支撑结构和电互连相关联的有效热传导的最小化，其通过调节中间级的温度和机械支撑结构以及将其连接到检​​测器级的电互连等于温度 的测辐射计像素的检测器级（即，通过有源热隔离）。 温度敏感度的提高优选通过串联连接的反向偏置肖特基二极管的温度感测实现。

公开(公告)号：US20050087687A1

公开(公告)日：2005-04-28

申请号：US10689720

申请日：2003-10-22

Applicant: Nathan Bluzer

Inventor： Nathan Bluzer

IPC: G01J5/20 ,  H01L25/00

CPC classification number: G01J5/20

Abstract: Electro-thermal feedback is utilized for zeroing the thermal conductance between a bolometer type detector element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing of the thermal conductance associated with the mechanical support and electrical readout interconnect structures is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage by the heating effect of a bipolar transistor amplifier circuit so that the temperature across the mechanical support and electrical interconnects structures are zeroed thereby greatly improving the thermal isolation, the responsivity and sensitivity of the electromagnetic radiation sensor.

Abstract translation: 电 - 热反馈用于使热辐射传感器组件中的像素的辐射热计型探测器元件与通过其机械支撑结构和电互连的环境之间的热传导归零，从而主要通过光子辐射来限制热传导。 通过电热反馈实现与机械支撑和电读出互连结构相关联的热传导归零，其通过双极晶体管放大器电路的加热效应来调节中间级的温度，使得机械支撑和电气 互连结构被归零，从而大大提高了电磁辐射传感器的热隔离，响应性和灵敏度。

公开(公告)号：US06489615B2

公开(公告)日：2002-12-03

申请号：US09738058

申请日：2000-12-15

Applicant: Nathan Bluzer

Inventor： Nathan Bluzer

IPC: G01J500

CPC classification number: G01J5/20 ,  G01J5/24

Abstract: Electro-thermal feedback is utilized for removing thermal conductance between a bolometer's absorber element of a pixel in a thermal radiation sensor assembly and the environments through its mechanical support structure and electrical interconnects, thereby limiting the thermal conductance primarily through photon radiation. Zeroing the thermal conductance associated with the mechanical support structure and electrical interconnects is achieved by electro-thermal feedback that adjust the temperature of an intermediate stage of the mechanical support structure and electrical interconnects to equal the bolometer's absorber element temperature.

公开(公告)号：US5021658A

公开(公告)日：1991-06-04

申请号：US373075

申请日：1989-06-29

Applicant: Nathan Bluzer

Inventor： Nathan Bluzer

IPC: G01J5/20 ,  H01L39/10

CPC classification number: H01L39/10 ,  G01J5/20 ,  Y10S505/849

Abstract: This is superconducting infrared sensor for producing output through a superconducting transformer. An increase in infrared light level causes a drop in current through a high temperature oxide superconductor film and its series primary winding and thereby causing an increase in current through a reference resistor and its series primary winding, and as the two primary windings are in bucking relationship, the change in current in the secondary is the sum of the absolute values of the changes in current through the high temperature oxide superconductor film and the reference resistor, and thus the current in the secondary of the transformer is a function of the infrared light level on the granular high temperature oxide superconductor film. A constant bias current source is connected in a manner so that the first series combination and the second series combination are in parallel with respect to the current source. The current source provides a bias current through the high temperature oxide superconductor film which is at least equal to the critical current of the high temperature oxide superconductor film when the infrared light level on the high temperature oxide superconductor film is essentially zero. Preferably, the reference resistor and the high temperature oxide superconductor film have resistances which are essentially equal when the infrared light level on the high temperature oxide superconductor film is essentially zero. The sensor is very sensitive to infrared, but relatively insensitive to noise in the bias current.

Abstract translation: 这是用于通过超导变压器产生输出的超导红外传感器。 红外光电平的增加导致通过高温氧化物超导体膜及其串联初级绕组的电流下降，从而引起通过参考电阻器及其串联初级绕组的电流增加，并且由于两个初级绕组处于降压关系 ，次级电流的变化是通过高温氧化物超导体膜和参考电阻器的电流变化的绝对值的和，因此变压器次级中的电流是红外光电平的函数 在颗粒状高温氧化物超导体膜上。 恒定偏置电流源以使得第一串联组合和第二串联组合相对于电流源并联的方式连接。 当高温氧化物超导体膜上的红外光电平基本上为零时，电流源提供通过高温氧化物超导体膜的偏置电流，其至少等于高温氧化物超导体膜的临界电流。 优选地，当高温氧化物超导体膜上的红外光水平基本上为零时，参考电阻器和高温氧化物超导体膜具有基本相等的电阻。 传感器对红外线非常敏感，但对偏置电流中的噪声相对不敏感。

公开(公告)号：US4672645A

公开(公告)日：1987-06-09

申请号：US237332

申请日：1981-02-23

Applicant: Nathan Bluzer ,  Donald R. Lampe

Inventor： Nathan Bluzer ,  Donald R. Lampe

IPC: G11C19/28 ,  G11C27/04 ,  H01L29/10 ,  H01L29/768 ,  H01L29/78

CPC classification number: G11C27/04 ,  G11C19/285 ,  H01L29/1062 ,  H01L29/76816

Abstract: A charge coupled device that includes an output portion having a field effect transistor disposed in the potential well channel to provide a non-destructive read-out of the analog value of a charge pocket located in the portion of such potential well channel beneath the transistor. Drain, source and channel regions of the transistor are disposed transverse to the flow of charge pockets. The conductivity of the channel is modulated as a function of the value of a charge pocket in the potential well beneath the transistor.

Abstract translation: 一种电荷耦合器件，其包括具有设置在势阱沟道中的场效应晶体管的输出部分，以提供位于晶体管下方的这种势阱沟道部分内的电荷腔的模拟值的非破坏性读出。 晶体管的漏极，源极和沟道区域横向于电荷袋的流动设置。 通道的电导率作为晶体管下方势阱中的电荷袋的值的函数进行调制。

公开(公告)号：US4488163A

公开(公告)日：1984-12-11

申请号：US225900

申请日：1981-01-19

Applicant: Nathan Bluzer ,  Alfred P. Turley ,  Francis J. Kub ,  Gerald M. Borsuk

Inventor： Nathan Bluzer ,  Alfred P. Turley ,  Francis J. Kub ,  Gerald M. Borsuk

IPC: H01L27/146 ,  H01L31/11 ,  H01L29/78 ,  H01L27/14 ,  H01L29/06 ,  H01L31/00

CPC classification number: H01L27/14654 ,  H01L27/14681 ,  H01L31/1105

Abstract: An array of photodetectors is described incorporating a PNP vertical structure in a monosilicon substrate with individual photodetectors optically and electrically isolated from one another by open or oxide filled grooves. Both PN junctions of the PNP structure or originally reverse biased with one junction acting as the photodetector may operate in the forward biased photovoltaic mode with high radiant energy intensity. The minority carriers injected into the N region are absorbed by the other PN junction providing base-collector transistor action to prevent blooming.

Abstract translation: 描述了一组光电检测器，其在单晶硅衬底中结合了PNP垂直结构，其中各个光电探测器通过开放或氧化物填充的沟槽彼此光学和电隔离。 PNP结构的两个PN结或者原来用作为光电检测器的一个结点反向偏置的PN结可以在具有高辐射能量强度的正向偏置光伏模式中操作。 注入N区的少数载流子被另一个PN结吸收，从而提供基极集电极晶体管的作用以防止起霜。