发明申请
- 专利标题： MOS transistor
- 专利标题（中）： MOS晶体管
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申请号： US10971828申请日： 2004-10-21
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公开(公告)号： US20050087777A1公开(公告)日： 2005-04-28
- 发明人: Jin Jung
- 申请人： Jin Jung
- 专利权人： ANAM Semiconductor Inc.
- 当前专利权人： ANAM Semiconductor Inc.
- 优先权： KR10-2003-0074439 20031023; KR10-2003-0074440 20031023
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L29/49 ; H01L29/76 ; H01L29/78
摘要：
The present invention relates to a MOS transistor which is capable of compensating the shortcomings of the conventional MOS transistor having three gate electrodes. In order to achieve the object the MOS transistor of the present invention is characterized in that the sidewall gates are made of material having an energy band gap higher than that of the material constituting the main gate or the sidewall gates are implanted with holes (or positive charges) or electrons (or negative charges). The MOS transistor of the present invention includes a gate dielectric layer formed on a semiconductor substrate at a predetermined width, a main gate formed onto a middle of the gate dielectric layer at a width narrower than that of the gate dielectric layer, sidewall insulators formed on both sides of the main gate, sidewall gates formed on the sidewall insulators and the gate dielectric layer extended outward the main gate, the sidewall gates being injected by holes or electrons, and source/drain regions formed outward the sidewall gates within the semiconductor substrate.
公开/授权文献
- US07279734B2 MOS transistor 公开/授权日：2007-10-09
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