发明申请
- 专利标题： Ruthenium compounds, process for their preparation, and ruthenium-containing thin films made by using the compounds
- 专利标题（中）： 钌化合物，其制备方法和使用该化合物制成的含钌薄膜
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申请号： US10499822申请日： 2003-01-08
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公开(公告)号： US20050090679A1公开(公告)日： 2005-04-28
- 发明人: Hideyuki Hirakoso , Masayuki Ishikawa , Akio Yanagisawa , Katsumi Ogi
- 申请人： Hideyuki Hirakoso , Masayuki Ishikawa , Akio Yanagisawa , Katsumi Ogi
- 优先权： JP2002-001226 20020108; JP2002-176948 20020618; JP2002-176949 20020618; JP2002-176950 20020618; JP2002-182395 20020624
- 国际申请： PCT/JP03/00074 WO 20030108
- 主分类号： C07F17/02
- IPC分类号： C07F17/02 ; C23C16/18 ; C23C16/44
摘要：
Bis(cyclopentadienyl)ruthenium complex havimg a content of at least one member selected from among sodium, potassium, calcium, iron, nickel and zinc of 5 ppm or below; and bis(cyclopentadienyl)ruthenium complex incorporated with 10 to 100 ppm of rhenium The complexes are suitable for metalorganic chemical vapor deposition (MOCVD) and can give ruthenium-containing thin film.
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