发明申请
- 专利标题： Method of reclaiming silicon wafers
- 专利标题（中）： 回收硅晶片的方法
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申请号： US10677309申请日： 2003-10-03
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公开(公告)号： US20050092349A1公开(公告)日： 2005-05-05
- 发明人: Tetsuo Suzuki , Satoru Takada
- 申请人： Tetsuo Suzuki , Satoru Takada
- 申请人地址： JP Kobe-shi US CA Hayward
- 专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.),KOBE PRECISION INC.
- 当前专利权人： Kabushiki Kaisha Kobe Seiko Sho (Kobe Steel Ltd.),KOBE PRECISION INC.
- 当前专利权人地址： JP Kobe-shi US CA Hayward
- 主分类号： H01L21/304
- IPC分类号： H01L21/304 ; C23G1/00 ; H01L21/02 ; H01L21/30 ; H01L21/302 ; H01L21/306 ; H01L21/322 ; H01L21/324
摘要：
A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.
公开/授权文献
- US07699997B2 Method of reclaiming silicon wafers 公开/授权日：2010-04-20
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