公开(公告)号：US20130302719A1

公开(公告)日：2013-11-14

申请号：US13982411

申请日：2012-02-14

申请人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

发明人： Satoru Takada ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M8/02

CPC分类号： H01M8/0206 ,  H01M8/0213 ,  H01M8/0228 ,  H01M2008/1095

摘要： Provided is a fuel cell separator that can maintain a low contact resistance for a long period of time while being used for a fuel cell, by using a carbon film that can be formed with high productivity. The fuel cell separator 10 is provided with: a substrate 1 comprising titanium or titanium alloy; and a conductive carbon layer 2 that is formed by compression bonding carbon powder onto the substrate 1, and covers the surface thereof. Between the substrate 1 and the carbon layer 2, particle-like titanium carbide 31 and carbon dissolved titanium 32 generated by reacting the titanium of the substrate 1 and carbon of the carbon layer 2 with each other through heat treatment are connected, forming an intermediate layer 3.

摘要翻译： 提供一种燃料电池隔板，其可以通过使用能够以高生产率形成的碳膜，能够在用于燃料电池的同时保持长时间的低接触电阻。 燃料电池隔板10设置有：包含钛或钛合金的基板1; 以及通过将碳粉压接在基板1上并覆盖其表面而形成的导电性碳层2。 在基板1和碳层2之间连接通过热处理使基板1的钛与碳层2的碳反应而产生的颗粒状的碳化钛31和碳溶解的钛32，形成中间层 3。

公开(公告)号：US06451696B1

公开(公告)日：2002-09-17

申请号：US09384725

申请日：1999-08-27

申请人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

发明人： Yoshihiro Hara ,  Tetsuo Suzuki ,  Satoru Takada ,  Hidetoshi Inoue

IPC分类号： H01L21302

CPC分类号： H01L21/02032

摘要： A method for reclaiming a wafer substrate material having a metallic film and a dielectric film includes a step for removing the entire metallic film and a part of the dielectric film with a chemical etching agent so as not to substantially dissolve the wafer substrate material itself, a step for removing the residual dielectric layer and the degenerated zone beneath the surface of the substrate by chemical-mechanical polishing, and a step for polishing at least one surface of the substrate.

摘要翻译： 用于回收具有金属膜和电介质膜的晶片衬底材料的方法包括用化学蚀刻剂去除整个金属膜和一部分电介质膜以便基本上不溶解晶片衬底材料本身的步骤， 用于通过化学机械抛光去除基底表面下面的残余介电层和退化区的步骤，以及用于抛光基底的至少一个表面的步骤。

公开(公告)号：US5855735A

公开(公告)日：1999-01-05

申请号：US538265

申请日：1995-10-03

申请人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

发明人： Satoru Takada ,  Hidetoshi Inoue ,  Yoshihiro Hara

IPC分类号： H01L21/66 ,  B24B9/06 ,  B24B21/00 ,  B24B37/04 ,  H01L21/02 ,  H01L21/30 ,  H01L21/304 ,  C23F3/00

CPC分类号： H01L21/02032 ,  B24B21/00 ,  B24B37/04 ,  B24B9/065 ,  H01L21/02079 ,  H01L21/30

摘要： A process comprising removing surface layer materials from the wafer by inducing micro-fractures in the surface using a rotating pad and an abrasive slurry until all of the surface layer materials are removed; and chemically etching the surfaces of the wafer until all micro-fractures are removed therefrom. Edge materials are removed by abrasive tape. Wafer thickness reduction during recycling is less than 30 microns per cycle. One of the front and back surfaces of the wafer substrate is polished, any dots or grooves being on the non-polished side. The abrasive slurry contains more than 6 volume percent abrasive particles, and the abrasive slurry has a viscosity greater than about 2 cP at ambient temperature. The preferred pad comprises an organic polymer having a hardness greater than about 40 on the Shore D scale, optimally a polyurethane. The pressure of the pad against the wafer surface preferably does not exceed about 3 psi. Preferably, the chemical etching solution contains potassium hydroxide. An acidic solution can then be applied to the wafer surface. The reclaimed semiconductor wafer can be a silicon wafer having a matted side having etch pits which does not exceed 20 microns in width, an average roughness not exceeding 0.5 microns and a peak-to-valley roughness not exceeding 5 microns. Any laser markings from the original wafer are present on the matted side of the wafer.

摘要翻译： 一种方法，其包括通过使用旋转垫和研磨​​剂浆料在表面中诱导微裂纹从晶片去除表面层材料，直到除去所有表面层材料; 并化学蚀刻晶片的表面，直到从中除去所有的微裂缝。 边缘材料由砂带除去。 回收期间的晶片厚度减少每周期小于30微米。 对晶片基板的正面和背面之一进行抛光，任何点或凹槽位于非抛光侧。 研磨浆料含有超过6体积％的磨料颗粒，研磨浆料在环境温度下的粘度大于约2cP。 优选的垫包括在肖氏D刻度上硬度大于约40的有机聚合物，最佳地是聚氨酯。 衬垫对晶片表面的压力优选不超过约3psi。 优选地，化学蚀刻溶液含有氢氧化钾。 然后可以将酸性溶液施加到晶片表面。 回收的半导体晶片可以是具有无光泽面的蚀刻凹坑的硅晶片，其宽度不超过20微米，平均粗糙度不超过0.5微米，峰 - 谷粗糙度不超过5微米。 来自原始晶片的任何激光标记存在于晶片的无光泽侧。

公开(公告)号：US5326607A

公开(公告)日：1994-07-05

申请号：US676569

申请日：1991-03-28

申请人： Kazuo Muramatsu ,  Nobuhiro Ohta ,  Shunsuke Takada ,  Motoharu Sato ,  Masami Takao ,  Hiroko Nagata ,  Satoru Takada

发明人： Kazuo Muramatsu ,  Nobuhiro Ohta ,  Shunsuke Takada ,  Motoharu Sato ,  Masami Takao ,  Hiroko Nagata ,  Satoru Takada

IPC分类号： C04B41/53 ,  C04B41/91 ,  C09K3/14 ,  G11B5/73 ,  G11B5/82 ,  G11B5/84 ,  C01B31/02

CPC分类号： C04B41/91 ,  C04B41/53 ,  C09K3/14 ,  G11B5/7305 ,  G11B5/82 ,  G11B5/84 ,  Y10T428/24355 ,  Y10T428/2457 ,  Y10T428/30

摘要： The surface of a blank for a textured amorphous carbon substrate is polished in a surface with a predetermined surface roughness, and then the blank with a polished surface is heated at a predetermined temperature in an oxidizing atmosphere to form minute irregularities in the polished surface through a reaction expressed by C+O.sub.2 =CO.sub.2 so that the surface is textured in an appropriate surface roughness. A randomly textured amorphous carbon substrate has a randomly textured surface with a surface roughness Ra in the range of 20 to 100 .ANG. and the ratio Ra.sub.2 /Ra.sub.1, where Ra.sub.1 is the surface roughness with respect to a circumferential direction, and Ra.sub.2 is the surface roughness with respect to a radial direction, in the range of 0.75 to 1.25 .ANG.. A concentrically textured amorphous carbon substrate has a concentrically textured surface with a surface roughness Ra in the range of 30 to 100 .ANG. or in the range of 40 to 200 .ANG., and the ratio Ra.sub.2 /Ra.sub.1 of 1.75 or greater.

摘要翻译： 在具有预定表面粗糙度的表面上抛光用于织构化非晶碳基底的坯料的表面，然后将具有抛光表面的坯料在氧化气氛中加热到预定温度，以在抛光表面中形成微小的凹凸，通过 由C + O 2 = CO 2表示的反应，使得表面以适当的表面粗糙度纹理化。 无规构造的无定形碳基板具有表面粗糙度Ra在20〜100范围内的无规纹理表面，Ra2 / Ra1的比率Ra1是相对于圆周方向的表面粗糙度，Ra2是表面粗糙度 相对于径向方向，在0.75至1.25的范围内。 同心纹理的非晶碳衬底具有表面粗糙度Ra在30至100安培范围内或40至200安培范围内的同心纹理表面，Ra2 / Ra1的比值为1.75或更高。

公开(公告)号：US09871254B2

公开(公告)日：2018-01-16

申请号：US14122168

申请日：2012-06-14

申请人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

发明人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M10/052 ,  H01M4/66 ,  H01M4/04

CPC分类号： H01M4/667 ,  H01M4/0402 ,  H01M4/661 ,  H01M4/663 ,  H01M10/052

摘要： Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).

公开(公告)号：US20140099544A1

公开(公告)日：2014-04-10

申请号：US14122168

申请日：2012-06-14

申请人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

发明人： Mamoru Hosokawa ,  Satoru Takada ,  Sho Katsura ,  Jun Suzuki ,  Toshiki Sato

IPC分类号： H01M4/66 ,  H01M4/04

CPC分类号： H01M4/667 ,  H01M4/0402 ,  H01M4/661 ,  H01M4/663 ,  H01M10/052

摘要： Provided is an electrode material with excellent tab weldability and realizing decreased contact resistance with an active material layer. A collector (electrode material) (1) is provided with a metal foil substrate (1a) and a carbon-containing conductive substance (1b), and is configured such that, when observed from a square viewfield with a surface area of 0.1 mm2, the conductive substance (1b) is arranged in islands on the surface of the substrate (1a) with a 1-80% coverage ratio of the conductive substance (1b) on the surface of the substrate (1a).

摘要翻译： 提供具有优异的接头焊接性并且与活性物质层实现降低的接触电阻的电极材料。 集电体（电极材料）（1）设置有金属箔基板（1a）和含碳导电性物质（1b），并且在从表面积为0.1mm 2的正方视场观察时， 导电物质（1b）以基板（1a）的表面上的导电物质（1b）的1-80％的覆盖率在基板（1a）的表面上以岛状排列。

公开(公告)号：US07452481B2

公开(公告)日：2008-11-18

申请号：US11129444

申请日：2005-05-16

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C09K13/00 ,  C09K13/06 ,  H01L21/461

CPC分类号： H01L21/3212 ,  C09G1/02 ,  C09K3/1463 ,  C09K13/08 ,  H01L21/02079

摘要： The polishing slurry contains monoclinic zirconium oxide particles having a crystallite size of 10 to 1,000 nm and an average particle diameter of 30 to 2,000 nm in an amount of 1 to 20 weight %, a carboxylic acid having three or more carboxyl groups in the molecule, and a quaternary alkylammonium hydroxide, and has a pH of 9 to 12. The method of reclaiming wafers comprises a step of polishing used test wafers by using the polishing slurry above and removing the films formed on the wafers and the degenerated layers formed on the wafer surfaces, a step of mirror-polishing at least one side of the wafers, and a step of cleaning the wafers.

摘要翻译： 研磨浆料含有微晶尺寸为10〜1000nm，平均粒径为30〜2000nm，分子量为1〜20重量％的羧酸的单斜晶氧化锆粒子， 和季铵烷基氢氧化铵，并且具有9至12的pH值。回收晶片的方法包括通过使用上述抛光浆料抛光所用测试晶片并除去形成在晶片上的膜和形成在晶片上的退化层的步骤 表面，对晶片的至少一侧进行镜面抛光的步骤，以及清洁晶片的步骤。

公开(公告)号：US07699997B2

公开(公告)日：2010-04-20

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： C03C25/68

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US20050092349A1

公开(公告)日：2005-05-05

申请号：US10677309

申请日：2003-10-03

申请人： Tetsuo Suzuki ,  Satoru Takada

发明人： Tetsuo Suzuki ,  Satoru Takada

IPC分类号： H01L21/304 ,  C23G1/00 ,  H01L21/02 ,  H01L21/30 ,  H01L21/302 ,  H01L21/306 ,  H01L21/322 ,  H01L21/324

CPC分类号： H01L21/02032 ,  H01L21/3221 ,  H01L21/324

摘要： A method of reclaiming silicon wafers including a film removal process, a polishing process, and a cleaning process, wherein a heating/removal process for removing a silicon wafer surface part by heating at 150-300° C. for 20 minutes to 5 hours is further included between the film removal process and the polishing process is provided. The present invention provides a useful method of reclaiming silicon wafers that removes Cu not only deposited on a surface but also penetrated inside of a silicon wafer, and does not give Cu contamination inside of the silicon wafer.

摘要翻译： 一种回收硅晶片的方法，包括膜去除工艺，抛光工艺和清洁工艺，其中通过在150-300℃下加热20分钟至5小时除去硅晶片表面部分的加热/除去工艺是 提供了膜去除工艺和抛光工艺之间的进一步包括。 本发明提供一种回收硅晶片的有用方法，该硅晶片除去不仅沉积在表面上而且也渗入硅晶片内部的Cu，并且不会在硅晶片内部产生Cu污染。

公开(公告)号：US06406923B1

公开(公告)日：2002-06-18

申请号：US09630316

申请日：2000-07-31

申请人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

发明人： Hidetoshi Inoue ,  Satoru Takada ,  Yoshihiro Hara

IPC分类号： H01L2100

CPC分类号： H01L21/02079 ,  H01L21/02032 ,  H01L21/30604 ,  H01L21/31111 ,  H01L21/32135

摘要： A process capable of reclaiming used semiconductor wafers with a reduced metallic contamination level on wafer surfaces. The process comprises the steps of removing one or more surface layers of the substrate by chemical etching; scraping off one surface of the substrate in small amount by mechanical machining; removing a damage layer, which has occurred due to the mechanical machining, by chemical etching; and polishing the other surface of the substrate into a mirror finish.

摘要翻译： 能够在晶片表面上回收具有降低的金属污染水平的已使用的半导体晶片的工艺。 该方法包括通过化学蚀刻去除衬底的一个或多个表面层的步骤; 通过机械加工刮擦少量的基板的一个表面; 通过化学蚀刻去除由于机械加工而发生的损伤层; 并将基板的另一表面抛光成镜面。