发明申请
- 专利标题: Plasma processing equipment
- 专利标题(中): 等离子体处理设备
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申请号: US10493946申请日: 2003-07-03
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公开(公告)号: US20050092437A1公开(公告)日: 2005-05-05
- 发明人: Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
- 申请人: Tadahiro Ohmi , Masaki Hirayama , Tetsuya Goto
- 优先权: JP2002-197227 20020705
- 国际申请: PCT/JP03/08491 WO 20030703
- 主分类号: H05H1/46
- IPC分类号: H05H1/46 ; C23C16/44 ; C23C16/455 ; C23C16/511 ; H01J37/32 ; H01L21/31 ; C23F1/00
摘要:
A plasma processing apparatus comprises a processing vessel defined by an outer wall and provided with a stage that holds a substrate to be processed thereon, an evacuation system coupled to the processing vessel, a microwave window provided on the processing vessel as a part of the outer wall so as to face the substrate to be processed on the stage, a plasma gas supplying part supplying a plasma gas to the processing vessel, and a microwave antenna provided on the processing vessel in correspondence to the microwave. The plasma gas supplying part includes a porous medium and the plasma gas supplying part supplies the plasma gas through the porous medium.
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