In silicon carbide semiconductor device and manufacturing method therefor, a metal electrode which is another than a gate electrode and which is contacted with a singlecrystalline silicon carbide substrate is treated with a predetermined heat process at a temperature which is lower than a thermal oxidization temperature by which a gate insulating film is formed and is sufficient to carry out a contact annealing between the singlecrystalline silicon carbide substrate and a metal after a whole surrounding of the gate insulating film is enclosed with the singlecrystalline silicon carbide substrate, a field insulating film, and the gate electrode. The present invention is applicable to a MOS capacitor, an n channel planar power MOSFET, and an n channel planar power IGBT.