- 专利标题: Formation of silicon-germanium-on-insulator (SGOI) by an integral high temperature SIMOX-Ge interdiffusion anneal
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申请号: US10984212申请日: 2004-11-09
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公开(公告)号: US20050095803A1公开(公告)日: 2005-05-05
- 发明人: Stephen Bedell , Keith Fogel , Devendra Sadana , Ghavam Shahidi
- 申请人: Stephen Bedell , Keith Fogel , Devendra Sadana , Ghavam Shahidi
- 申请人地址: US NY Armonk
- 专利权人: International Business Machines Corporation
- 当前专利权人: International Business Machines Corporation
- 当前专利权人地址: US NY Armonk
- 主分类号: H01L27/08
- IPC分类号: H01L27/08 ; H01L21/02 ; H01L21/20 ; H01L21/265 ; H01L21/762 ; H01L27/12 ; H01L21/84
摘要:
A method of forming a substantially relaxed, high-quality SiGe-on-insulator substrate material using SIMOX and Ge interdiffusion is provided. The method includes first implanting ions into a Si-containing substrate to form an implant rich region in the Si-containing substrate. The implant rich region has a sufficient ion concentration such that during a subsequent anneal at high temperatures a barrier layer that is resistant to Ge diffusion is formed. Next, a Ge-containing layer is formed on a surface of the Si-containing substrate, and thereafter a heating step is performed at a temperature which permits formation of the barrier layer and interdiffusion of Ge thereby forming a substantially relaxed, single crystal SiGe layer atop the barrier layer.