发明申请
- 专利标题： Etching method and plasma etching apparatus
- 专利标题（中）： 蚀刻方法和等离子体蚀刻装置
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申请号： US10844498申请日： 2004-05-13
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公开(公告)号： US20050103441A1公开(公告)日： 2005-05-19
- 发明人: Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
- 申请人： Masanobu Honda , Kazuya Nagaseki , Hanako Kida , Koichi Yatsuda , Youbun Ito , Koichiro Inazawa , Rie Inazawa , Hisataka Hayashi
- 优先权： JPJP2001-349289 20011114; JPJP2002-115087 20020417
- 主分类号： H01L21/311
- IPC分类号： H01L21/311 ; H01L21/306
摘要：
There is provided an etching method and a plasma etching apparatus capable of taking a large etching selection ratio and of forming a hole having an appropriate shape. When etching an etching target film 204 by using an organic film 202 having a predetermined pattern as a mask, processing gas is introduced into an airtight processing container 104. There are provided a high frequency power source 122 of 40 MHz and a high frequency power source 128 of 3.2 MHz, by which two different kinds of high frequency powers are applied to a lower electrode 106. The power of each high frequency power is properly combined, thereby executing the etching process by using low plasma electron density Ne and high self-bias voltage Vdc which are generated by high frequency power.
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