发明申请
- 专利标题： Wafer processing method
- 专利标题（中）： 晶圆加工方法
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申请号： US10986371申请日： 2004-11-12
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公开(公告)号： US20050106782A1公开(公告)日： 2005-05-19
- 发明人: Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
- 申请人： Satoshi Genda , Toshiyuki Yoshikawa , Ryugo Oba , Kenji Furuta , Nobuyasu Kitahara
- 优先权： JP2003-388104 20031118
- 主分类号： B23K26/00
- IPC分类号： B23K26/00 ; B23K26/18 ; B23K26/40 ; B23K101/40 ; H01L21/00 ; H01L21/301 ; H01L21/44 ; H01L21/78
摘要：
A laser beam processing method for processing a wafer by applying a laser beam to a predetermined area, comprising the steps of forming a resin film which absorbs a laser beam, on the surface to be processed of the wafer; applying a laser beam to the surface to be processed of the wafer through the resin film; and removing the resin film after the laser beam application step.
公开/授权文献
- US07179723B2 Wafer processing method 公开/授权日：2007-02-20
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