发明申请
- 专利标题: Method to modulate etch rate in SLAM
- 专利标题(中): 在SLAM中调制蚀刻速率的方法
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申请号: US10715956申请日: 2003-11-17
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公开(公告)号: US20050106886A1公开(公告)日: 2005-05-19
- 发明人: Michael Goodner , Robert Meagley , Kevin O'Brien
- 申请人: Michael Goodner , Robert Meagley , Kevin O'Brien
- 主分类号: H01L21/311
- IPC分类号: H01L21/311 ; H01L21/768 ; H01L21/4763 ; H01L21/302 ; H01L21/461
摘要:
Several techniques are described for modulating the etch rate of a sacrificial light absorbing material (SLAM) by altering its composition so that it matches the etch rate of a surrounding dielectric. This is particularly useful in a dual damascene process where the SLAM fills a via opening and is etched along with a surrounding dielectric material to form trenches overlying the via opening.
公开/授权文献
- US07101798B2 Method to modulate etch rate in SLAM 公开/授权日:2006-09-05