发明申请
- 专利标题： Trench power MOSFET with reduced gate resistance
- 专利标题（中）： 沟槽功率MOSFET，栅极电阻降低
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申请号： US10981114申请日： 2004-11-04
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公开(公告)号： US20050112823A1公开(公告)日： 2005-05-26
- 发明人: Jianjun Cao , Paul Harvey , Dave Kent , Robert Montgomery , Hugo Burke , Kyle Spring
- 申请人： Jianjun Cao , Paul Harvey , Dave Kent , Robert Montgomery , Hugo Burke , Kyle Spring
- 主分类号： H01L21/336
- IPC分类号： H01L21/336 ; H01L21/8242 ; H01L29/40 ; H01L29/45 ; H01L29/49 ; H01L29/78
摘要：
A method for manufacturing a trench type power semiconductor device which includes process steps for forming proud gate electrodes in order to decrease the resistivity thereof.
公开/授权文献
- US07368353B2 Trench power MOSFET with reduced gate resistance 公开/授权日：2008-05-06
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