发明申请
- 专利标题： Clean chemistry for tungsten/tungsten nitride gates
- 专利标题（中）： 钨/氮化钨门的清洁化学
-
申请号： US10718381申请日： 2003-11-20
-
公开(公告)号： US20050112904A1公开(公告)日： 2005-05-26
- 发明人: Herve Kermel , Ravikumar Ramachandran
- 申请人： Herve Kermel , Ravikumar Ramachandran
- 申请人地址： US NY ARMONK US CA SAN JOSE
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,INFINEON TECHNOLOGIES OF NORTH AMERICA CORP.
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION,INFINEON TECHNOLOGIES OF NORTH AMERICA CORP.
- 当前专利权人地址： US NY ARMONK US CA SAN JOSE
- 主分类号： C23G1/10
- IPC分类号： C23G1/10 ; H01L21/02 ; H01L21/28 ; H01L21/3213 ; C23G1/02 ; H01L21/302 ; H01L21/3205 ; H01L21/461 ; H01L21/4763
摘要：
A process and composition for cleaning debris from a stack etch/ion implanted CMOS device which includes a tungsten gate conductor. The composition includes sulfuric acid and hydrogen peroxide in a volume ratio of at least about 6:1. In the process the composition contacts the CMOS device at atmospheric pressure and a temperature of between about 70° C. and about 90° C.
信息查询
