发明申请
- 专利标题： Partial inter-locking metal contact structure for semiconductor devices and method of manufacture
- 专利标题（中）： 半导体器件部分互锁金属接触结构及其制造方法
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申请号： US10723152申请日： 2003-11-26
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公开(公告)号： US20050112957A1公开(公告)日： 2005-05-26
- 发明人: Chih-Chao Yang , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Wong
- 申请人： Chih-Chao Yang , Lawrence Clevenger , Timothy Dalton , Louis Hsu , Carl Radens , Keith Wong
- 申请人地址： US NY ARMONK
- 专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人： INTERNATIONAL BUSINESS MACHINES CORPORATION
- 当前专利权人地址： US NY ARMONK
- 主分类号： H01L21/768
- IPC分类号： H01L21/768 ; H01L23/367 ; H01L23/522 ; H01L23/528 ; H01L23/48
摘要：
A structure and method of fabricating a “Lego”-like interlocking contact for high wiring density semiconductors is characterized in that the barrier liner formed in the contact via extends only partially upwards into the adjacent wire level. As a consequence, current crowding and related reliability problems associated with conventional prior art interconnect structures is avoided and structural integrity of the contact via (metal stud) structure is enhanced. The novel “crown” shape of the Lego-like interlocking contact structure that is fabricated to extend in an upward direction may be employed for other integrated circuit applications including forming capacitor (e.g., MIMCAP) and heat sink structures due to its increased surface area.