发明申请
US20050118771A1 Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor
审中-公开
通过碳原位掺杂控制磷分布，用于高性能垂直PNP晶体管
- 专利标题： Control of phosphorus profile by carbon in-situ doping for high performance vertical PNP transistor
- 专利标题（中）： 通过碳原位掺杂控制磷分布，用于高性能垂直PNP晶体管
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申请号： US10978074申请日： 2004-10-28
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公开(公告)号： US20050118771A1公开(公告)日： 2005-06-02
- 发明人: Hiroshi Yasuda , Badih El-Kareh , Scott Balster , Manfred Schiekofer
- 申请人： Hiroshi Yasuda , Badih El-Kareh , Scott Balster , Manfred Schiekofer
- 优先权： DE10351100.8 20031031
- 主分类号： H01L21/331
- IPC分类号： H01L21/331 ; H01L29/10 ; H01L29/73 ; H01L29/732 ; H01L29/737 ; H01L21/425 ; H01L21/8222
摘要：
A method of producing a vertical bipolar PNP transistor is disclosed. The phosphorous profile in the base layer is controlled. Carbon that is incorporated in the base layer in the vicinity of the base-collector junction suppresses the diffusion of phosphorous deeper than implanted in a subsequent thermal step. PNP transistors with a narrow phosphorous-doped base can thus be manufactured with a cut-off frequency increased from 23 GHz to 30 GHz.