发明申请
- 专利标题： Semiconductor laser and method for manufacturing the same
- 专利标题（中）： 半导体激光器及其制造方法
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申请号： US10785054申请日： 2004-02-25
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公开(公告)号： US20050121680A1公开(公告)日： 2005-06-09
- 发明人: Jung Song , Chul Lee , Ki Kim , Yong Baek
- 申请人： Jung Song , Chul Lee , Ki Kim , Yong Baek
- 优先权： KR2003-88260 20031205
- 主分类号： H01L21/00
- IPC分类号： H01L21/00 ; H01L33/00 ; H01S5/20 ; H01S5/223 ; H01S5/227 ; H01S5/32
摘要：
Provided is a semiconductor laser including a substrate etched into a mesa structure, an active layer, clad layers, a current blocking layer, an etch-stop, an ohmic contact layer, and electrodes, and a method for manufacturing the same, whereby it is possible to improve a ratio of light output to input current by blocking a leakage current flowing outside an active waveguide in a BH laser.
公开/授权文献
- US07095057B2 Semiconductor laser and method for manufacturing the same 公开/授权日：2006-08-22
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