发明申请
- 专利标题： Semiconductor device and a method of manufacturing the same
- 专利标题（中）： 半导体装置及其制造方法
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申请号： US11035999申请日： 2005-01-18
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公开(公告)号： US20050121805A1公开(公告)日： 2005-06-09
- 发明人: Tomoo Matsuzawa , Takafumi Nishita , Yasuyuki Nakajima , Toshiaki Morita
- 申请人： Tomoo Matsuzawa , Takafumi Nishita , Yasuyuki Nakajima , Toshiaki Morita
- 专利权人： Renesas Technology Corp. Hitachi ULSI Systems Co., Ltd.
- 当前专利权人： Renesas Technology Corp. Hitachi ULSI Systems Co., Ltd.
- 优先权： JP2002-146321 20020521
- 主分类号： H01L23/48
- IPC分类号： H01L23/48 ; H01L21/60 ; H01L23/498 ; H01L25/065 ; H01L21/48
摘要：
A semiconductor device comprising a plurality of wires for electrically connecting a plurality of electrode pads arranged on a main surface of a semiconductor chip along one side of the semiconductor chip to a plurality of connecting portions arranged on the main surface of a wiring substrate along one side of the semiconductor chip, respectively, wherein second wires out of the plural wires consisting of first and second wires adjacent to each other have a larger loop height than the first wires, one end portions of the second wires are connected to the electrode pads at positions farther from one side of the semiconductor chip than the one end portions of the first wires, and the other end portions of the second wires are connected to the connecting portions at positions farther from one side of the semiconductor chip than the other end portions of the first wires.
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