公开(公告)号：US20070187823A1

公开(公告)日：2007-08-16

申请号：US11783983

申请日：2007-04-13

申请人： Naotaka Tanaka ,  Tomio Iwasaki ,  Hideo Miura ,  Yasuyuki Nakajima ,  Tomoo Matsuzawa

发明人： Naotaka Tanaka ,  Tomio Iwasaki ,  Hideo Miura ,  Yasuyuki Nakajima ,  Tomoo Matsuzawa

IPC分类号： H01L23/48

CPC分类号： H01L23/53238 ,  H01L21/563 ,  H01L23/3128 ,  H01L24/03 ,  H01L24/05 ,  H01L24/13 ,  H01L24/16 ,  H01L24/45 ,  H01L24/48 ,  H01L24/73 ,  H01L24/78 ,  H01L24/85 ,  H01L25/0657 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05624 ,  H01L2224/1134 ,  H01L2224/13144 ,  H01L2224/16225 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/32245 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48247 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/4851 ,  H01L2224/48624 ,  H01L2224/73204 ,  H01L2224/73253 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85205 ,  H01L2225/06558 ,  H01L2225/06568 ,  H01L2924/00013 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01015 ,  H01L2924/01019 ,  H01L2924/0102 ,  H01L2924/01022 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/01105 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/20105 ,  H01L2924/20106 ,  H01L2924/20107 ,  H01L2924/20303 ,  H01L2924/20304 ,  H01L2924/20305 ,  H01L2924/20751 ,  H01L2924/00014 ,  H01L2224/13099 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2924/00011 ,  H01L2924/00015

摘要： An object of the present invention is to establish, for an LSI having a stacked interconnection structure of Cu interconnect/Low-k material, a narrow pitch wire bonding technique enabling a reduction in damage to a bonding pad and application similar to the conventional LSI of an aluminum interconnection. In a semiconductor device having a multilayer interconnection made of a Cu interconnect/Low-k dielectric material, the above-described object can be attained by a bonding pad structure in which all the wiring layers up to the uppermost cap interconnect are formed of a Cu wiring layer and a bonding pad portion formed of a Cu layer is equipped with a refractory intermediate metal layer such as Ti (titanium) filmor (tungsten) film on the Cu layer and an aluminum alloy layer on the intermediate metal layer.

摘要翻译： 本发明的目的在于，对于具有Cu互连/ Low-k材料的堆叠互连结构的LSI，可以实现能够减少对焊盘的损伤的窄间距引线接合技术和类似于传统LSI的 铝互连。 在具有由Cu互连/ Low-k电介质材料制成的多层互连的半导体器件中，上述目的可以通过一种焊盘结构来实现，其中所有的布线层直到最上盖互连件都是由Cu 布线层和由Cu层形成的接合焊盘部分在Cu层上装有诸如Ti（钛）膜（钨）的耐火材料中间金属层和中间金属层上的铝合金层。

公开(公告)号：US07005310B2

公开(公告)日：2006-02-28

申请号：US10651087

申请日：2003-08-29

申请人： Kenji Hanada ,  Masaki Nakanishi ,  Tomoo Matsuzawa ,  Koji Shida ,  Kazutoshi Takashima

发明人： Kenji Hanada ,  Masaki Nakanishi ,  Tomoo Matsuzawa ,  Koji Shida ,  Kazutoshi Takashima

IPC分类号： H01L21/00 ,  H04N5/225

CPC分类号： H01L24/97 ,  H01L24/45 ,  H01L24/48 ,  H01L27/14618 ,  H01L27/14621 ,  H01L27/14625 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/45144 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/4848 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2924/01029 ,  H01L2924/12043 ,  H01L2924/16151 ,  H01L2924/16152 ,  H01L2924/181 ,  H01L2924/19105 ,  H01L2924/3025 ,  H05K3/305 ,  H05K3/323 ,  H05K3/361 ,  H05K2201/10977 ,  H01L2224/48091 ,  H01L2924/00014 ,  H01L2924/00 ,  H01L2924/00012

摘要： A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

摘要翻译： 传感器芯片和容纳在其中的传感器芯片的透镜架安装在布线基板的表面上，并且在其中容纳透镜的透镜架与透镜安装座联接。 在布线基板的后表面上安装有逻辑芯片，存储芯片和无源部件，并用密封树脂密封。 传感器芯片的电极焊盘通过接合线电连接到布线基板的表面上的电极，但是在布线基板的表面上的电极上还形成有凸块，并且该凸块与接合 线。 在布线基板的表面上，用各向异性导电膜和接合材料粘结柔性基板。 当制造相机模块时，在组装布线基板的背面侧之后组装布线基板的表面侧。

公开(公告)号：US20050121805A1

公开(公告)日：2005-06-09

申请号：US11035999

申请日：2005-01-18

申请人： Tomoo Matsuzawa ,  Takafumi Nishita ,  Yasuyuki Nakajima ,  Toshiaki Morita

发明人： Tomoo Matsuzawa ,  Takafumi Nishita ,  Yasuyuki Nakajima ,  Toshiaki Morita

IPC分类号： H01L23/48 ,  H01L21/60 ,  H01L23/498 ,  H01L25/065 ,  H01L21/48

CPC分类号： H01L24/85 ,  H01L23/49838 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/97 ,  H01L25/0657 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05647 ,  H01L2224/32145 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4809 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48624 ,  H01L2224/48647 ,  H01L2224/49052 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/85 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/97 ,  H01L2225/0651 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01029 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01057 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/19043 ,  H01L2924/01039 ,  H01L2224/78 ,  H01L2924/00012 ,  H01L2924/00

摘要： A semiconductor device comprising a plurality of wires for electrically connecting a plurality of electrode pads arranged on a main surface of a semiconductor chip along one side of the semiconductor chip to a plurality of connecting portions arranged on the main surface of a wiring substrate along one side of the semiconductor chip, respectively, wherein second wires out of the plural wires consisting of first and second wires adjacent to each other have a larger loop height than the first wires, one end portions of the second wires are connected to the electrode pads at positions farther from one side of the semiconductor chip than the one end portions of the first wires, and the other end portions of the second wires are connected to the connecting portions at positions farther from one side of the semiconductor chip than the other end portions of the first wires.

摘要翻译： 一种半导体器件，包括多个引线，用于将布置在半导体芯片的主表面上的多个电极焊盘沿着半导体芯片的一侧电连接到布置在布线基板的主表面上的多个连接部分 其中，由彼此相邻的第一和第二布线组成的多根导线中的第二布线具有比第一布线更大的环形高度，第二布线的一个端部在电极焊盘的位置处连接 比半导体芯片的一侧比第一布线的一个端部更远，而第二布线的另一个端部在与半导体芯片的另一个端部相比更靠近半导体芯片的一侧的位置处连接到连接部分 第一根电线

公开(公告)号：US5252854A

公开(公告)日：1993-10-12

申请号：US717262

申请日：1991-06-18

申请人： Junichi Arita ,  Akihiko Iwaya ,  Tomoo Matsuzawa ,  Masahiro Ichitani

发明人： Junichi Arita ,  Akihiko Iwaya ,  Tomoo Matsuzawa ,  Masahiro Ichitani

IPC分类号： H01L21/60 ,  H01L23/495 ,  H01L23/50 ,  H01L23/02

CPC分类号： H01L24/06 ,  H01L23/4951 ,  H01L23/49534 ,  H01L23/49537 ,  H01L23/50 ,  H01L24/05 ,  H01L24/49 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/06136 ,  H01L2224/32245 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4554 ,  H01L2224/4569 ,  H01L2224/48091 ,  H01L2224/48247 ,  H01L2224/4826 ,  H01L2224/48465 ,  H01L2224/48599 ,  H01L2224/48799 ,  H01L2224/49109 ,  H01L2224/49171 ,  H01L2224/73215 ,  H01L2224/85201 ,  H01L2224/85205 ,  H01L24/45 ,  H01L24/48 ,  H01L2924/00014 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01023 ,  H01L2924/01028 ,  H01L2924/01029 ,  H01L2924/01033 ,  H01L2924/01039 ,  H01L2924/01074 ,  H01L2924/01075 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/01082 ,  H01L2924/07802 ,  H01L2924/14 ,  H01L2924/181

摘要： Disclosed is a resin-molded type semiconductor device having a thin package while avoiding short-circuit of wires with a common inner lead. In the construction thereof, a common inner lead constituted by a thin metal sheet is fixed onto a circuit-forming surface of a rectangular semiconductor chip substantially in parallel with longer sides of the chip and substantially in a central region of the chip, and a plurality of inner leads for signals, which are in the form of a frame, are stacked and fixed onto the common inner lead; then these components are molded with resin.

摘要翻译： 公开了具有薄封装的树脂模制型半导体器件，同时避免了具有公共内引线的电线短路。 在其构造中，将由薄金属片构成的公共内引线固定到矩形半导体芯片的电路形成表面上，该矩形半导体芯片与芯片的较长边基本上平行，并且基本上在芯片的中心区域中，并且多个 以框架形式的信号的内引线被堆叠并固定在公共内引线上; 那么这些组分用树脂模制。

公开(公告)号：US07049214B2

公开(公告)日：2006-05-23

申请号：US10807249

申请日：2004-03-24

申请人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

发明人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

IPC分类号： H01L21/44

CPC分类号： H01L24/85 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78704 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/351 ,  H01L2924/01046 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2924/0102 ,  H01L2924/013 ,  H01L2924/01004 ,  H01L2924/00013 ,  H01L2924/01006

摘要： A method is provided to improve the adhesion between bonding pads and ball portions of gold wires to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 μm and the diameter of the ball portion is smaller than 55 μm or the diameter of the wire portion of each gold wire is not larger than 25 μm.

摘要翻译： 提供了一种提高接合焊盘和金线球部之间的粘附性以提高半导体器件的可靠性的方法。 约1重量％ 用于在形成在布线基板上的电极焊盘和形成在半导体芯片上的电极焊盘（主要由Al形成的顶层布线的暴露区域）之间的连接的金线中包含Pd的％。 在金线的电极和球部之间的接合部分中，抑制了Au和Al的相互扩散，以防止在PCT（压力锅试验）之后形成Au 4 Al。 因此，即使当电极焊盘的间距小于65μm并且球部的直径小于55μm或每个金线的线部分的直径不大于25μm时，也获得期望的接合强度 。

公开(公告)号：US20060091487A1

公开(公告)日：2006-05-04

申请号：US11304618

申请日：2005-12-16

申请人： Kenji Hanada ,  Masaki Nakanishi ,  Tomoo Matsuzawa ,  Koji Shida ,  Kazutoshi Takashima

发明人： Kenji Hanada ,  Masaki Nakanishi ,  Tomoo Matsuzawa ,  Koji Shida ,  Kazutoshi Takashima

IPC分类号： H01L31/0232 ,  H01L31/062 ,  H01L33/00

CPC分类号： H01L24/05 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/81 ,  H01L24/85 ,  H01L24/97 ,  H01L27/14618 ,  H01L27/14683 ,  H01L31/0203 ,  H01L31/02325 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05599 ,  H01L2224/13144 ,  H01L2224/45144 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48465 ,  H01L2224/48475 ,  H01L2224/4848 ,  H01L2224/48599 ,  H01L2224/81801 ,  H01L2224/82 ,  H01L2224/85051 ,  H01L2224/85181 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/85444 ,  H01L2224/85447 ,  H01L2224/86 ,  H01L2224/97 ,  H01L2924/00014 ,  H01L2924/014 ,  H01L2924/12043 ,  H01L2924/181 ,  H01L2924/19041 ,  H01L2924/19105 ,  H01L2924/30105 ,  H01L2924/3025 ,  H04N5/2253 ,  H04N5/2254 ,  H04N5/2257 ,  H01L2224/85 ,  H01L2924/01079 ,  H01L2224/78 ,  H01L2924/00 ,  H01L2924/00012

摘要： A sensor chip and a lens mount accommodating therein the sensor chip are mounted on a surface of a wiring substrate and a lens holder accommodating a lens therein is coupled with the lens mount. On a rear surface of the wiring substrate, a logic chip, a memory chip and a passive component are mounted and they are sealed with a seal resin. An electrode pad of the sensor chip is electrically connected to an electrode on the surface of the wiring substrate via a bonding wire but a stud bump is also formed on the electrode at the surface of the wiring substrate and this stud bump is connected with the bonding wire. On the surface of the wiring substrate, a flexible substrate is bonded with an anisotropic conductive film and a bonding material. When a camera module is to be manufactured, the surface side of the wiring substrate is assembled after the rear surface side of the wiring substrate is assembled.

公开(公告)号：US07449786B2

公开(公告)日：2008-11-11

申请号：US11357024

申请日：2006-02-21

申请人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

发明人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

IPC分类号： H01L23/48 ,  H01L23/52

CPC分类号： H01L24/85 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78704 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/351 ,  H01L2924/01046 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2924/0102 ,  H01L2924/013 ,  H01L2924/01004 ,  H01L2924/00013 ,  H01L2924/01006

摘要： A semiconductor device with improved the adhesion between bonding pads and ball portions of gold wires is provided to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 μm and the diameter of the ball portion is smaller than 55 μm or the diameter of the wire portion of each gold wire is not larger than 25 μm.

摘要翻译： 提供了提高接合焊盘和金线的球部之间的粘附性的半导体器件，以提高半导体器件的可靠性。 约1重量％ 用于在形成在布线基板上的电极焊盘和形成在半导体芯片上的电极焊盘（主要由Al形成的顶层布线的暴露区域）之间的连接的金线中包含Pd的％。 在金线的电极和球部之间的接合部分中，抑制了Au和Al的相互扩散，以防止在PCT（压力锅试验）之后形成Au 4 Al。 因此，即使当电极焊盘的间距小于65μm并且球部的直径小于55μm或每个金线的线部分的直径不大于25μm时，也获得期望的接合强度 。

公开(公告)号：US20060138679A1

公开(公告)日：2006-06-29

申请号：US11357024

申请日：2006-02-21

申请人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

发明人： Naoki Kawanabe ,  Tomoo Matsuzawa ,  Toshiaki Morita ,  Takafumi Nishita

IPC分类号： H01L23/52

CPC分类号： H01L24/85 ,  H01L21/565 ,  H01L23/3128 ,  H01L24/05 ,  H01L24/06 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/73 ,  H01L24/78 ,  H01L24/97 ,  H01L2224/02166 ,  H01L2224/0401 ,  H01L2224/04042 ,  H01L2224/05553 ,  H01L2224/05554 ,  H01L2224/05624 ,  H01L2224/05644 ,  H01L2224/32225 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45164 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48455 ,  H01L2224/48465 ,  H01L2224/4847 ,  H01L2224/48624 ,  H01L2224/48644 ,  H01L2224/48724 ,  H01L2224/49171 ,  H01L2224/49431 ,  H01L2224/49433 ,  H01L2224/73265 ,  H01L2224/78301 ,  H01L2224/78704 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2224/92247 ,  H01L2224/97 ,  H01L2924/00011 ,  H01L2924/01202 ,  H01L2924/01204 ,  H01L2924/014 ,  H01L2924/05042 ,  H01L2924/14 ,  H01L2924/15311 ,  H01L2924/181 ,  H01L2924/20752 ,  H01L2924/351 ,  H01L2924/01046 ,  H01L2224/85 ,  H01L2924/00014 ,  H01L2924/01013 ,  H01L2924/00 ,  H01L2924/00012 ,  H01L2224/48744 ,  H01L2924/00015 ,  H01L2924/0102 ,  H01L2924/013 ,  H01L2924/01004 ,  H01L2924/00013 ,  H01L2924/01006

摘要： A semiconductor device with improved the adhesion between bonding pads and ball portions of gold wires is provided to improve the reliability of a semiconductor device. About 1 wt. % of Pd is contained in gold wires for connection between electrode pads formed on a wiring substrate and electrode pads (exposed areas of a top layer wiring formed mainly of Al) formed on a semiconductor chip. In bonded portions between the electrode and ball portions of the gold wires, an interdiffusion of Au and Al is suppressed to prevent the formation of Au4Al after PCT (Pressure Cooker Test). Thus, a desired bonding strength is obtained even when the pitch of the electrode pads is smaller than 65 μm and the diameter of the ball portion is smaller than 55 μm or the diameter of the wire portion of each gold wire is not larger than 25 μm.

摘要翻译： 提供了提高接合焊盘和金线的球部之间的粘附性的半导体器件，以提高半导体器件的可靠性。 约1重量％ 用于在形成在布线基板上的电极焊盘和形成在半导体芯片上的电极焊盘（主要由Al形成的顶层布线的暴露区域）之间的连接的金线中包含Pd的％。 在金线的电极和球部之间的接合部分中，抑制了Au和Al的相互扩散，以防止在PCT（压力锅试验）之后形成Au 4 Al。 因此，即使当电极焊盘的间距小于65μm并且球部的直径小于55μm或每个金线的线部分的直径不大于25μm时，也获得期望的接合强度 。

公开(公告)号：US07015127B2

公开(公告)日：2006-03-21

申请号：US10408119

申请日：2003-04-08

申请人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

发明人： Yasuyuki Nakajima ,  Toshiaki Morita ,  Tomoo Matsuzawa ,  Seiichi Tomoi ,  Naoki Kawanabe

IPC分类号： H01L21/44

CPC分类号： H01L24/05 ,  H01L23/53223 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L24/49 ,  H01L24/78 ,  H01L24/85 ,  H01L2224/04042 ,  H01L2224/05073 ,  H01L2224/05166 ,  H01L2224/05181 ,  H01L2224/05184 ,  H01L2224/05187 ,  H01L2224/05554 ,  H01L2224/05556 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45144 ,  H01L2224/4807 ,  H01L2224/48091 ,  H01L2224/48095 ,  H01L2224/48227 ,  H01L2224/48453 ,  H01L2224/48465 ,  H01L2224/48507 ,  H01L2224/48624 ,  H01L2224/49175 ,  H01L2224/78301 ,  H01L2224/85045 ,  H01L2224/85181 ,  H01L2224/85201 ,  H01L2224/85203 ,  H01L2224/85205 ,  H01L2924/01005 ,  H01L2924/01006 ,  H01L2924/01013 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01047 ,  H01L2924/0105 ,  H01L2924/01073 ,  H01L2924/01074 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/0496 ,  H01L2924/05042 ,  H01L2924/1306 ,  H01L2924/14 ,  H01L2924/181 ,  H01L2924/20106 ,  H01L2924/20305 ,  H01L2924/20306 ,  H01L2924/20307 ,  H01L2924/20308 ,  H01L2924/20752 ,  H01L2924/3011 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/20751 ,  H01L2924/00012

摘要： Provided is a semiconductor device comprising a first metal film formed above a semiconductor chip, a ball portion formed over said first metal film and made of a second metal, and an alloy layer of said first metal and said second metal which alloy layer is formed between said first metal film and said ball portion, wherein said alloy layer reaches the bottom of said first metal film, and said ball portion is covered with a resin; and a manufacturing method thereof. The present invention makes it possible to improve adhesion between the bonding pad portion and ball portion of a bonding wire over an interconnect, thereby improving the reliability of the semiconductor device.

公开(公告)号：US06897570B2

公开(公告)日：2005-05-24

申请号：US10340307

申请日：2003-01-09

申请人： Takashi Nakajima ,  Naotaka Tanaka ,  Yasuyuki Nakajima ,  Ryo Haruta ,  Tomoo Matsuzawa ,  Masashi Sahara ,  Ken Okutani

发明人： Takashi Nakajima ,  Naotaka Tanaka ,  Yasuyuki Nakajima ,  Ryo Haruta ,  Tomoo Matsuzawa ,  Masashi Sahara ,  Ken Okutani

IPC分类号： H01L21/60 ,  H01L23/485 ,  H01L23/522 ,  H01L29/40

CPC分类号： H01L24/05 ,  H01L23/485 ,  H01L23/5226 ,  H01L24/03 ,  H01L24/45 ,  H01L24/48 ,  H01L2224/02166 ,  H01L2224/04042 ,  H01L2224/05082 ,  H01L2224/05093 ,  H01L2224/05096 ,  H01L2224/05166 ,  H01L2224/05187 ,  H01L2224/05556 ,  H01L2224/05557 ,  H01L2224/05558 ,  H01L2224/05624 ,  H01L2224/45015 ,  H01L2224/45124 ,  H01L2224/45144 ,  H01L2224/45147 ,  H01L2224/4807 ,  H01L2224/48453 ,  H01L2224/48463 ,  H01L2224/48624 ,  H01L2224/48724 ,  H01L2224/48799 ,  H01L2224/48824 ,  H01L2224/85205 ,  H01L2924/01006 ,  H01L2924/01014 ,  H01L2924/01022 ,  H01L2924/01027 ,  H01L2924/01029 ,  H01L2924/01044 ,  H01L2924/0105 ,  H01L2924/01074 ,  H01L2924/01078 ,  H01L2924/01079 ,  H01L2924/014 ,  H01L2924/04941 ,  H01L2924/05042 ,  H01L2924/20106 ,  H01L2924/20303 ,  H01L2924/20752 ,  H01L2924/30105 ,  H01L2924/00014 ,  H01L2924/04953 ,  H01L2924/00 ,  H01L2924/00011

摘要： A highly reliable semiconductor device provided herein can prevent a junction between a pad and a wire from coming off, and pads from peeling off an underlying insulating layer on the interface thereof. The semiconductor device has plugs formed in a region in which an electrode pad is formed over a substrate. The plugs protrude into the electrode pad.

摘要翻译： 这里提供的高度可靠的半导体器件可以防止焊盘和电线之间的接合脱落，并且焊盘从其界面上的下面的绝缘层剥离。 半导体器件具有形成在电极焊盘形成在衬底上的区域中的插塞。 插头突出到电极垫中。