Invention Application
- Patent Title: Surface emitting laser, and transceiver, optical transceiver, and optical communication system employing the surface emitting laser
- Patent Title (中): 表面发射激光器，收发器，光收发器和采用表面发射激光器的光通信系统
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Application No.: US10958125Application Date: 2004-10-05
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Publication No.: US20050123014A1Publication Date: 2005-06-09
- Inventor: Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
- Applicant: Hitoshi Shimizu , Setiagung Casimirus , Yasukazu Shiina , Takeshi Hama , Norihiro Iwai
- Applicant Address: JP Chiyoda-ku
- Assignee: THE FURUKAWA ELECTRONIC CO., LTD.
- Current Assignee: THE FURUKAWA ELECTRONIC CO., LTD.
- Current Assignee Address: JP Chiyoda-ku
- Priority: JP2002-104392 20020405; JP2002-104393 20020405; JP2002-170574 20020611; JP2002-212830 20020722
- Main IPC: H01S5/00
- IPC: H01S5/00 ; H01S5/183 ; H01S5/343
Abstract:
A surface emitting laser includes a lower semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area; an active layer vertically sandwiched by cladding layers; a current confinement layer of AlzGa1-zAs having an oxide area in a peripheral portion of the current confinement layer, where 0.95≦z≦1; and an upper semiconductor multilayer mirror formed of a plurality of pairs of a high-refractive-index area and a low-refractive-index area. The low-refractive-index area of at least one of the lower semiconductor multilayer mirror and the upper semiconductor multilayer mirror includes an Alz1Ga1-z1As layer with a thickness thinner than that of the current confinement layer, where z≦z1.
Public/Granted literature
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