发明申请
US20050123459A1 Method of purifying niobium compound and/or tantalum compound
审中-公开
铌化合物和/或钽化合物的净化方法
- 专利标题： Method of purifying niobium compound and/or tantalum compound
- 专利标题（中）： 铌化合物和/或钽化合物的净化方法
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申请号： US10505806申请日： 2003-02-27
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公开(公告)号： US20050123459A1公开(公告)日： 2005-06-09
- 发明人: Hirohisa Kikuyama , Masahide Waki , Hiroto Izumi , Hirofumi Yazaki , Kenji Aoki , Shinji Hashiguchi , Masatsugu Kawawaki , Yuko Murakami
- 申请人： Hirohisa Kikuyama , Masahide Waki , Hiroto Izumi , Hirofumi Yazaki , Kenji Aoki , Shinji Hashiguchi , Masatsugu Kawawaki , Yuko Murakami
- 优先权： JP2002-52411 20020227
- 国际申请： PCT/JP03/02224 WO 20030227
- 主分类号： C01G33/00
- IPC分类号： C01G33/00 ; C01G35/00 ; C01G35/02 ; C22B3/44 ; C22B34/20 ; C22B34/24
摘要：
The present invention provides a method for purifying a niobium compound and/or tantalum compound in a simplified manner at a low cost. This is accomplished by providing a method for purifying a niobium compound and/or tantalum compound whereby a niobium compound and/or tantalum compound dissolved in a solvent is allowed to precipitate to be isolated.