公开(公告)号：US20110000423A1

公开(公告)日：2011-01-06

申请号：US12805786

申请日：2010-08-19

Applicant: Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

Inventor： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

IPC: C30B15/08

CPC classification number: C30B15/08 ,  C01B9/08 ,  C30B29/12 ,  Y10T117/10

Abstract: Provided is an apparatus capable of producing a fluoride crystal in a very short period of time, and a method suitable for producing a fluoride crystal using the apparatus. The apparatus comprises a chamber, a window material, and the like, and is modified such that it can evacuate air from the chamber to provide a high degree vacuum there. The apparatus further includes a crucible, which has a perforation at its bottom. The capillary portion of the perforation is adjusted to facilitate the contact of a seed crystal with a melt. By using the apparatus it is possible to stably produce high quality single crystals of fluorides in a short period of time.

Abstract translation: 提供了能够在非常短的时间内产生氟化物晶体的装置，以及适用于使用该装置生产氟化物晶体的方法。 该设备包括一个室，一个窗户材料等，并且被改造成使得它可以从室中排出空气以在那里提供高度的真空度。 该装置还包括坩埚，其底部具有穿孔。 调整穿孔的毛细管部分以促进晶种与熔体的接触。 通过使用该装置，可以在短时间内稳定地生产高质量的氟化物单晶。

公开(公告)号：US20080029487A1

公开(公告)日：2008-02-07

申请号：US11722120

申请日：2005-12-19

Applicant: Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Takanobu Kujime ,  Keiichi Nii ,  Rui Hasebe ,  Hitoshi Tsurumaru ,  Hideki Nakashima

Inventor： Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Takanobu Kujime ,  Keiichi Nii ,  Rui Hasebe ,  Hitoshi Tsurumaru ,  Hideki Nakashima

IPC: H01L21/306 ,  C23F1/26

CPC classification number: H01L21/32134 ,  C23F1/26 ,  H01L27/124

Abstract: A fine treatment agent according to the present invention is a fine treatment agent for the fine treatment of a multilayer film, including a tungsten film and a silicon oxide film comprising at least one from among hydrogen fluoride, nitric acid, ammonium fluoride and ammonium chloride. Thus, a fine treatment agent which makes fine treatment on a multilayer film, including a tungsten film and a silicon oxide film, possible by controlling the etching rate and a fine treatment method using the same can be provided.

Abstract translation: 根据本发明的精细处理剂是用于精细处理包括钨膜和包含氟化氢，硝酸，氟化铵和氯化铵中的至少一种的氧化硅膜的多层膜的精细处理剂。 因此，可以提供通过控制蚀刻速率和使用其的精细处理方法对包括钨膜和氧化硅膜在内的多层膜进行精细处理的精细处理剂。

公开(公告)号：US20070227567A1

公开(公告)日：2007-10-04

申请号：US11631671

申请日：2005-07-11

Applicant: Tadahiro Ohmi ,  Akinobu Teramoto ,  Hirohisa Kikuyama ,  Keiichi Nii ,  Masashi Yamamoto

Inventor： Tadahiro Ohmi ,  Akinobu Teramoto ,  Hirohisa Kikuyama ,  Keiichi Nii ,  Masashi Yamamoto

IPC: B08B3/00 ,  C11D9/44 ,  H01L21/302

CPC classification number: H01L21/02063

Abstract: Disclosed is a process liquid which causes only little dissolution of atoms from a semiconductor surface and enables to form a clean and flat semiconductor surface. Also disclosed are a processing method and an apparatus for manufacturing a semiconductor. Specifically disclosed is a process liquid-which causes only little dissolution of atoms from a semiconductor surface by using an aqueous solution containing at least one alcohol or ketone, thereby realizing a clean and flat surface.

Abstract translation: 公开了一种处理液体，其仅使半导体表面的原子几乎不溶解，并且能够形成清洁且平坦的半导体表面。 还公开了一种用于制造半导体的处理方法和装置。 具体公开了一种处理液体，其通过使用含有至少一种醇或酮的水溶液使半导体表面的原子几乎不溶解，从而实现清洁和平坦的表面。

公开(公告)号：US20070056508A1

公开(公告)日：2007-03-15

申请号：US10554424

申请日：2004-04-23

Applicant: Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

Inventor： Tsuguo Fukuda ,  Hirohisa Kikuyama ,  Tomohiko Satonaga

IPC: C30B35/00 ,  C30B11/00

CPC classification number: C30B15/08 ,  C01B9/08 ,  C30B29/12 ,  Y10T117/10

Abstract: An apparatus for producing a fluoride crystal, which has a chamber, a window material and the like capable of dealing with the fluoride, is equipped with facilities necessary for high vacuum evacuation, and uses a crucible in which the capillary portion of the hole formed in the bottom thereof is so controlled for a seed crystal and a molten material to be easily contacted to each other; and a method for producing a fluoride crystal comprising using the apparatus. The apparatus allows the production of a single crystal of a fluoride having high quality in a extremely short time with stability.

Abstract translation: 具有能够处理氟化物的室，窗材料等的氟化物晶体的制造装置具有高真空排气所需的设备，并且使用坩埚，其中形成有孔的毛细管部分 其底部被如此控制以使晶种和熔融材料彼此容易接触; 以及使用该装置的氟化物晶体的制造方法。 该装置允许在极短的时间内稳定地生产具有高质量的氟化物的单晶。

公开(公告)号：US07175823B2

公开(公告)日：2007-02-13

申请号：US10505802

申请日：2003-02-27

Applicant: Hirohisa Kikuyama ,  Masahide Waki ,  Hiroto Izumi ,  Hirofumi Yazaki ,  Kenji Aoki ,  Shinji Hashiguchi ,  Masatsugu Kawawaki ,  Yuko Murakami

Inventor： Hirohisa Kikuyama ,  Masahide Waki ,  Hiroto Izumi ,  Hirofumi Yazaki ,  Kenji Aoki ,  Shinji Hashiguchi ,  Masatsugu Kawawaki ,  Yuko Murakami

IPC: C01G33/00 ,  C01G35/00

CPC classification number: C01G33/003 ,  C01G33/00 ,  C01G35/00 ,  C01G35/003 ,  C01P2006/80 ,  C22B3/20 ,  C22B3/22 ,  C22B3/44 ,  C22B34/24 ,  Y02P10/234

Abstract: The present invention provides a method enabling the high purification of a niobium compound and/or tantalum compound in a simplified manner at a low cost. This is accomplished by providing a method enabling the high purification of a niobium compound and/or tantalum compound comprising the steps of preparing a solution containing niobium and/or tantalum, allowing a precipitate comprising niobium and/or tantalum to develop, separating the precipitate by filtration from the filtrate, converting the precipitate to a liquid melt or taking the filtrate, and separating a niobium compound from a tantalum compound or vice versa by utilizing the difference in solubility to the solvent between the niobium compound and the tantalum compound.

Abstract translation: 本发明提供了一种能够以低成本简便地进行铌化合物和/或钽化合物的高纯化的方法。 这是通过提供一种能够高效纯化铌化合物和/或钽化合物的方法实现的，包括以下步骤：制备含有铌和/或钽的溶液，使包含铌和/或钽的沉淀物显影，分离沉淀物 从滤液过滤，将沉淀物转化为液体熔融物或取出滤液，并通过利用铌化合物和钽化合物之间的溶剂的溶解度差异将钽铌化合物与钽化合物分离，反之亦然。

公开(公告)号：US06905606B1

公开(公告)日：2005-06-14

申请号：US09890470

申请日：2000-01-28

Applicant: Hirohisa Kikuyama ,  Toshirou Fukudome ,  Masayuki Miyashita

Inventor： Hirohisa Kikuyama ,  Toshirou Fukudome ,  Masayuki Miyashita

IPC: C02F1/58 ,  C02F1/52 ,  C02F1/66

CPC classification number: C02F1/5245 ,  C02F1/66 ,  C02F2101/14 ,  C02F2103/346 ,  Y10S210/915

Abstract: A method for removing calcium from water containing a high concentration of calcium bicarbonate, permitting a reduction of the calcium bicarbonate equivalent to 200-500 ppm calcium to the level in accordance with the water quality standards for industrial use, not by a method using a large amount of heat and power as heating and deairing, but by a simple chemical treatment. Calcium hydroxide is added to waste water containing a high concentration of calcium in a form of calcium bicarbonate for making them react with each other, and removing calcium by fixing it to calcium bicarbonate.

Abstract translation: 一种从含有高浓度碳酸氢钙的水中除去钙的方法，允许将等于200-500ppm钙的碳酸氢钙相对于工业用水的水质标准降低到水平，而不是使用大的方法 热量和热量作为加热和脱气，而是通过简单的化学处理。 将氢氧化钙加入到含有高浓度碳酸钙形式的钙的废水中，以使它们彼此反应，并通过将其固定为碳酸氢钙来除去钙。

公开(公告)号：US5803956A

公开(公告)日：1998-09-08

申请号：US938469

申请日：1996-01-11

Applicant: Tadahiro Ohmi ,  Matagoro Maeno ,  Hirohisa Kikuyama

Inventor： Tadahiro Ohmi ,  Matagoro Maeno ,  Hirohisa Kikuyama

IPC: C09K13/08 ,  H01L21/306 ,  H01L21/311

CPC classification number: H01L21/02052 ,  C09K13/08 ,  H01L21/31111

Abstract: Hydrofluoric acid has incorporated therein a hydrocarbon nonionic surfactant having an HLB value of 7 to 17. The composition exhibits improved wetting and other properties for use in surface treatment for micro processing.

Abstract translation: 氢氟酸在其中掺入了HLB值为7至17的烃非离子表面活性剂。该组合物显示出改善的润湿性和用于微加工的表面处理的其它性能。

公开(公告)号：US07740825B2

公开(公告)日：2010-06-22

申请号：US11547199

申请日：2005-03-31

Applicant: Kazuyuki Tohji ,  Yoshinori Satoh ,  Hirohisa Kikuyama ,  Masahide Waki ,  Shinji Hashiguchi ,  Yasutaka Tashiro

Inventor： Kazuyuki Tohji ,  Yoshinori Satoh ,  Hirohisa Kikuyama ,  Masahide Waki ,  Shinji Hashiguchi ,  Yasutaka Tashiro

IPC: D01F9/12

CPC classification number: H01M4/96 ,  A61L27/08 ,  A61L2400/12 ,  B82Y30/00 ,  B82Y40/00 ,  C01B32/168 ,  C01B32/17 ,  C01B2202/06 ,  C04B35/83 ,  C04B2235/445 ,  C04B2235/5288 ,  C04B2235/6562 ,  C04B2235/6567 ,  C04B2235/666 ,  C04B2235/77 ,  C04B2235/96 ,  H01M4/587

Abstract: A carbon nanotube aggregate and a method for forming a carbon nanotube aggregate are provided. The carbon nanotube aggregate can be formed by treating carbon nanotubes with fluorine gas and sintering the resulting fluorinated carbon nanotubes. A carbon nanotube aggregate can be formed which does not contain a binder or resin matrix.

Abstract translation: 提供碳纳米管集合体和形成碳纳米管集合体的方法。 可以通过用氟气处理碳纳米管并烧结所得氟化碳纳米管来形成碳纳米管集合体。 可以形成不含粘合剂或树脂基体的碳纳米管集合体。

公开(公告)号：US07413606B2

公开(公告)日：2008-08-19

申请号：US10564283

申请日：2004-07-20

Applicant: Tomohiko Satonaga ,  Hirohisa Kikuyama ,  Tsuguo Fukuda

Inventor： Tomohiko Satonaga ,  Hirohisa Kikuyama ,  Tsuguo Fukuda

IPC: C30B15/20

CPC classification number: C30B29/12 ,  C30B15/08 ,  C30B15/10

Abstract: It is aimed at providing a fluoride crystal growing method capable of controlling a shape of the crystal by a micro-pulling-down method. Fluoride crystals in shapes depending on purposes, respectively, can be grown by adopting carbon, platinum, and iridium as crucible materials adaptable to fluorides, respectively, and by designing shapes of the crucibles taking account of wettabilities of the materials with the fluorides, respectively.

Abstract translation: 本发明的目的在于提供能够通过微拉法控制晶体的形状的氟化物晶体生长方法。 分别通过采用碳，铂和铱作为适用于氟化物的坩埚材料，并分别考虑到与氟化物的材料的润湿性来设计坩埚的形状，来生长取决于目的的形状的氟化物晶体。

公开(公告)号：US20070112183A1

公开(公告)日：2007-05-17

申请号：US10555384

申请日：2004-05-06

Applicant: Hisao Kitano ,  Hiroshi Shimizu ,  Masakatsu Nozaki ,  Fumio Tanimoto ,  Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Shinji Hashiguchi

Inventor： Hisao Kitano ,  Hiroshi Shimizu ,  Masakatsu Nozaki ,  Fumio Tanimoto ,  Hirohisa Kikuyama ,  Masahide Waki ,  Kanenori Ito ,  Shinji Hashiguchi

IPC: C08B37/08

CPC classification number: C07H5/06 ,  A23K10/20 ,  A23K20/163 ,  A23K20/24 ,  A23K50/80 ,  C08B37/003

Abstract: This invention aims to develop a chitin oligomer composition and/or a chitosan oligomer composition wherein the content of an oligomer from a trimer to a decamer is 60% or more, and to develop a process for preparing the above-mentioned oligomer composition. The object of the invention can be achieved by mixing hydrofluoric acid or hydrohalogenated acid other than hydrofluoric acid and hydrofluoric acid with a chitin-based material and/or a chitosan-based material.

Abstract translation: 本发明的目的在于开发几丁质低聚物组合物和/或壳聚糖低聚物组合物，其中从三聚体到十聚体的低聚物的含量为60％以上，并且开发制备上述低聚物组合物的方法。 本发明的目的可以通过将除氢氟酸和氢氟酸之外的氢氟酸或氢卤酸与几丁质基材料和/或壳聚糖基材料混合来实现。