发明申请
- 专利标题： Process of producing multicrystalline silicon substrate and solar cell
- 专利标题（中）： 生产多晶硅衬底和太阳能电池的工艺
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申请号： US10505979申请日： 2003-02-21
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公开(公告)号： US20050124139A1公开(公告)日： 2005-06-09
- 发明人: Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
- 申请人： Masaki Mizutani , Shunichi Ishihara , Katsumi Nakagawa , Hiroshi Sato , Takehito Yoshino , Shoji Nishida , Noritaka Ukiyo , Masaaki Iwane , Yukiko Iwasaki
- 优先权： JP2002-054340 20020228
- 国际申请： PCT/JP03/01914 WO 20030221
- 主分类号： C01B33/02
- IPC分类号： C01B33/02 ; C30B11/00 ; C30B29/06 ; C30B33/00 ; H01L21/208 ; H01L31/18 ; H01L21/301 ; H01L21/46 ; H01L21/78
摘要：
There is provided a process of producing a multicrystalline silicon substrate having excellent characteristics as a solar cell substrate. A multicrystalline silicon ingot made by directional solidification 10 is cut such that a normal line of a principal surface 14 of a multicrystalline silicon substrate 13 is substantially perpendicular to a longitudinal direction of crystal grains 11 of the multicrystalline silicon ingot made by directional solidification 10.
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