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    Electrode arranging method
    5.
    发明申请
    Electrode arranging method 审中-公开
    电极排列方法

    公开(公告)号：US20050087226A1

    公开(公告)日：2005-04-28

    申请号：US10957577

    申请日：2004-10-05

    申请人： Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    发明人： Shoji Nishida ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    IPC分类号： H01L21/28 ,  H01L31/00 ,  H01L31/04

    CPC分类号： H01L31/022425 ,  Y02E10/50

    摘要： The method of arranging an electrode according to the present invention includes: arranging an electrode material (103) for forming a eutectic with silicon on a silicon base (101) having unevenness; heating the silicon base (101) at a temperature equal to or higher than a eutectic temperature of the silicon and the electrode material (103); and cooling the silicon base (101) to flatten the unevenness on a surface of the silicon base just under the arranged electrode material (103). The present invention can provide a method of arranging an electrode on an uneven surface, which is a simple method and enables mass-production, and more particularly a method of arranging an electrode on a surface of a solar cell which can realize high efficiency of the solar cell.

    摘要翻译： 根据本发明的电极布置方法包括：在具有不平坦度的硅基底（101）上布置用于与硅形成共晶的电极材料（103）; 在等于或高于硅和电极材料（103）的共晶温度的温度下加热硅基底（101）; 并且冷却硅基底（101）以使正好在布置的电极材料（103）下面的硅基底的表面上的凹凸变平。 本发明可以提供一种在不平坦表面上设置电极的方法，这是一种简单的方法并且可以批量生产，更具体地说，一种在太阳能电池的表面上设置电极的方法，其可以实现高效率 太阳能电池。

    Method of producing thin-film single-crystal device, solar cell module and method of producing the same
    6.
    发明授权
    Method of producing thin-film single-crystal device, solar cell module and method of producing the same 失效
    薄膜单晶器件的制造方法，太阳能电池模块及其制造方法

    公开(公告)号：US06452091B1

    公开(公告)日：2002-09-17

    申请号：US09614548

    申请日：2000-07-12

    申请人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    发明人： Katsumi Nakagawa ,  Takao Yonehara ,  Yasuyoshi Takai ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Masaaki Iwane ,  Yukiko Iwasaki

    IPC分类号： H01L2102

    CPC分类号： H01L21/76259 ,  H01L21/304 ,  Y10T156/1002 ,  Y10T156/1028 ,  Y10T156/1041 ,  Y10T156/1048 ,  Y10T156/1049

    摘要： The peeling of a thin-film single-crystal from a substrate is carried out so that the directions of straight lines on the single-crystal surface made by planes on which the single-crystal is apt to cleave are different from the front line direction of the peeled single-crystal. This single-crystal is used in a solar cell and a drive circuit member of an image display element. A method is provided which prevents a decrease in quality and yield of a single crystal layer when it is peeled from a substrate. A flexible solar cell module having a thin film single-crystal layer is made so that its flexing direction is different from the single-crystal's cleaving direction. Thus, a thin-film single-crystal solar cell module having excellent durability and reliability due to a lack of defect or cracking during production and use, and a method for producing the same, is provided.

    摘要翻译： 进行从基板剥离薄膜单晶，使得由单晶易于劈开的平面制成的单晶面上的直线的方向不同于 剥离的单晶。 该单晶体用于太阳能电池和图像显示元件的驱动电路部件。 提供了当从基板剥离时防止单晶层的质量和产量降低的方法。 制成具有薄膜单晶层的柔性太阳能电池模块，使其挠曲方向与单晶的分裂方向不同。 因此，提供了由于在生产和使用期间缺少缺陷或破裂而具有优异的耐久性和可靠性的薄膜单晶太阳能电池组件及其制造方法。

    Process for producing semiconductor member, and process for producing solar cell
    9.
    发明授权
    Process for producing semiconductor member, and process for producing solar cell 失效
    半导体部件的制造方法以及太阳能电池的制造方法

    公开(公告)号：US06566235B2

    公开(公告)日：2003-05-20

    申请号：US09819680

    申请日：2001-03-29

    申请人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

    发明人： Shoji Nishida ,  Takao Yonehara ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo ,  Yukiko Iwasaki

    IPC分类号： H01L2146

    CPC分类号： H01L21/02032 ,  H01L21/3083 ,  H01L21/76259 ,  H01L31/1804 ,  Y02E10/547 ,  Y02P70/521

    摘要： A process for producing a semiconductor member, comprising a first step of forming a porous layer by making porous a first member at its surface portion, leaving some region or regions thereof not made porous; a second step of bonding a semiconductor layer formed on the porous layer and on the first-member surface left not made porous, to a second member to form a bonded structure; and a third step of separating the bonded structure at the part of the porous layer. The first member is made porous leaving some region or regions thereof not made porous so that the porous layer does not cause any separation at the part of the porous layer in the first and second steps. This process can make the semiconductor layer unseparable from the single-crystal silicon member before the separation for transferring the semiconductor layer to the support member side, without setting the anodizing conditions strictly. Also disclosed is a process for producing a solar cell by the above process.

    摘要翻译： 一种半导体部件的制造方法，其特征在于，包括：通过在其表面部分形成多孔第一部件而形成多孔层的第一工序，使一部分区域或多个区域形成多孔; 将形成在所述多孔层上的半导体层和未形成多孔的所述第一构件表面接合到第二构件以形成接合结构的第二步骤; 以及在多孔层的一部分分离结合结构的第三步骤。 第一个构件是多孔的，留下一些不是多孔的区域或区域，使得多孔层在第一和第二步骤中在多孔层的部分处不引起任何分离。该方法可以使半导体层与单个层不可分离 在将半导体层转移到支撑构件侧的分离之前的晶体硅构件，而不严格地设定阳极氧化条件。还公开了通过上述方法制造太阳能电池的方法。

    Anodizing apparatus
    10.
    发明授权
    Anodizing apparatus 失效
    阳极氧化装置

    公开(公告)号：US06818104B2

    公开(公告)日：2004-11-16

    申请号：US10669002

    申请日：2003-09-24

    申请人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    发明人： Yukiko Iwasaki ,  Shoji Nishida ,  Kiyofumi Sakaguchi ,  Noritaka Ukiyo

    IPC分类号： C25D1700

    CPC分类号： H01L21/02032 ,  C25D11/32 ,  C25D17/10 ,  H01L21/0203 ,  H01L21/76259 ,  H01L29/0657 ,  H01L2221/6835 ,  H01L2221/68359 ,  H01L2221/68363

    摘要： In a process for producing a semiconductor member, and a solar cell, making use of a thin-film crystal semiconductor layer, the process includes the steps of: (1) anodizing the surface of a first substrate to form a porous layer at least on one side of the substrate, (2) forming a semiconductor layer at least on the surface of the porous layer, (3) removing the semiconductor layer at its peripheral region, (4) bonding a second substrate to the surface of the semiconductor layer, (5) separating the semiconductor layer from the first substrate at the part of the porous layer, and (6) treating the surface of the first substrate after separation and repeating the above steps (1) to (5).

    摘要翻译： 在利用薄膜晶体半导体层制造半导体部件和太阳能电池的方法中，该方法包括以下步骤：（1）阳极氧化第一基板的表面以至少形成多孔层 （2）至少在多孔层的表面上形成半导体层，（3）在其周边区域去除半导体层，（4）将第二基板接合到半导体层的表面， （5）在所述多孔层的所述部分处从所述第一基板分离所述半导体层，以及（6）分离后处理所述第一基板的表面并重复上述步骤（1）至（5）。