Invention Application
- Patent Title: Heterostructure resistor and method of forming the same
- Patent Title (中): 异质结构电阻及其形成方法
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Application No.: US10745831Application Date: 2003-12-24
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Publication No.: US20050127400A1Publication Date: 2005-06-16
- Inventor: Yee-Chia Yeo , Wen-Chin Lee , Chih-Hsin Ko , Chung-Hu Ke , Chun-Chieh Lin , Chenming Hu
- Applicant: Yee-Chia Yeo , Wen-Chin Lee , Chih-Hsin Ko , Chung-Hu Ke , Chun-Chieh Lin , Chenming Hu
- Main IPC: H01L27/06
- IPC: H01L27/06 ; H01L29/02 ; H01L29/165 ; H01L29/8605 ; H01L31/109
Abstract:
A heterostructure resistor comprises a doped region formed in a portion of a semiconductor substrate, the substrate comprising a first semiconductor material having a first natural lattice constant. The doped region comprises a semiconductor layer overlying the semiconductor substrate. The semiconductor layer comprises a second semiconductor material with a second natural lattice constant.
Public/Granted literature
- US07183593B2 Heterostructure resistor and method of forming the same Public/Granted day:2007-02-27
Information query
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