发明申请
- 专利标题: Surface acoustic wave device and manufacturing method thereof
- 专利标题(中): 声表面波装置及其制造方法
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申请号: US11007489申请日: 2004-12-08
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公开(公告)号: US20050127794A1公开(公告)日: 2005-06-16
- 发明人: Kyosuke Ozaki , Hideyuki Takahashi , Takashi Sato , Satoshi Waga , Takeshi Ikeda , Toshihiro Meguro
- 申请人: Kyosuke Ozaki , Hideyuki Takahashi , Takashi Sato , Satoshi Waga , Takeshi Ikeda , Toshihiro Meguro
- 专利权人: ALPS ELECTRIC CO., LTD.
- 当前专利权人: ALPS ELECTRIC CO., LTD.
- 优先权: JP2003-415839 20031215
- 主分类号: H03H9/145
- IPC分类号: H03H9/145 ; H03H3/08 ; H03H3/10 ; H03H9/02 ; H03H9/25
摘要:
A piezoelectric substrate and interdigital electrode portions are covered with an insulating layer with an insulating thin film interposed therebetween. The piezoelectric substrate is made of LiTaO3 and the insulating thin film and the insulating layer are made of silicon oxide. By intentionally making the upper surface of the insulating layer flat, the deterioration of propagation efficiency of surface acoustic waves can be suppressed, so that it is possible to reduce increase in insertion loss of a resonator. Since the upper surface of the insulating layer is flat, it is also possible to reduce variation in resonant frequency and anti-resonant frequency due to the temperature change of the surface acoustic wave device.