-
公开(公告)号：US20240283424A1
公开(公告)日：2024-08-22
申请号：US18653234
申请日：2024-05-02
发明人： Hironori Fukuhara , Rei Goto , Keiichi Maki
CPC分类号： H03H9/02574 , H03H3/10 , H03H9/02031 , H03H9/02559 , H03H9/02834 , H03H9/0585 , H03H9/14502 , H03H9/25 , H03H9/6406 , H03H9/725 , H10N30/072
摘要： An acoustic wave device is disclosed. The acoustic wave device includes a support layer, a ceramic layer positioned over the support layer, a piezoelectric layer positioned over the ceramic layer, and an interdigital transducer electrode positioned over the piezoelectric layer. The support layer has a higher thermal conductivity than the ceramic layer. The ceramic layer can be a polycrystalline spinel layer. The acoustic wave device can be a surface acoustic wave device configured to generate a surface acoustic wave.
-
公开(公告)号：US11824514B2
公开(公告)日：2023-11-21
申请号：US16615910
申请日：2018-04-23
发明人： Matthias Knapp , Ingo Bleyl
CPC分类号： H03H9/02574 , H03H3/10 , H03H9/02559 , H03H9/02834 , H03H9/02866
摘要： For a multilayer SAW device arranged on a carrier substrate it is proposed to use a specific material for the carrier substrate. If a silicon material having a selected range of Euler angles is used as a material for the carrier substrat improved suppression of disturbing signals is achieved.
-
公开(公告)号：US11800803B2
公开(公告)日：2023-10-24
申请号：US16306822
申请日：2017-05-30
申请人： Soitec
发明人： Marcel Broekaart
IPC分类号： H01L41/312 , H01L41/08 , H03H3/10 , H03H9/02 , H10N30/072 , H10N30/00
CPC分类号： H10N30/072 , H03H3/10 , H03H9/02543 , H03H9/02574 , H10N30/1051 , H10N30/10516
摘要： A hybrid structure for a surface acoustic wave device comprises a useful layer of piezoelectric material having a first free surface and a second surface disposed on a support substrate that has a lower coefficient of thermal expansion than that of the useful layer, wherein the useful layer comprises an area of nanocavities.
-
公开(公告)号：US11791226B2
公开(公告)日：2023-10-17
申请号：US17017407
申请日：2020-09-10
发明人： Je-Hsiung Lan , Ranadeep Dutta , Jonghae Kim
IPC分类号： H01L23/15 , H01L21/768 , H01L21/321 , H01L21/48 , H01L23/522 , H01L23/373 , C04B35/111 , C04B37/02 , H03H9/10 , H03H3/10 , H01L27/06 , H03H3/02
CPC分类号： H01L23/15 , C04B35/111 , C04B37/025 , H01L21/3212 , H01L21/4807 , H01L21/76801 , H01L23/3738 , H01L23/5222 , H01L27/0629 , H03H3/10 , H03H9/1014 , C04B2235/963 , H03H2003/027
摘要： Disclosed are devices and methods for semiconductor devices including a ceramic substrate. Aspects disclosed include semiconductor device including an electrical component, an alumina ceramic substrate and a substrate-film. The substrate-film is deposited on the alumina ceramic substrate. The substrate-film has a planar substrate-film surface opposite the alumina ceramic substrate. The electrical component is formed on the substrate-film surface of the substrate-film on the alumina ceramic substrate.
-
公开(公告)号：US20230208387A1
公开(公告)日：2023-06-29
申请号：US18115117
申请日：2023-02-28
发明人： Masakazu MIMURA
CPC分类号： H03H9/02889 , H03H3/10 , H03H9/25 , H03H9/145 , H03H9/1092 , H03H9/02559 , H03H9/02637 , H03H9/14541 , H10N30/877
摘要： An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO3 substrate. When Euler Angles of the LiNbO3 substrate are within a range of about 0° ± 5°, within a range of about θ ± 1.5°, within a range of about 0° ± 10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and θ of the Euler Angles satisfy θ = -0.05°/(T/r - 0.04) + 31.35°.
-
公开(公告)号：US11595020B2
公开(公告)日：2023-02-28
申请号：US16877309
申请日：2020-05-18
申请人： Soitec
发明人： Arnaud Castex , Daniel Delprat , Bernard Aspar , Ionut Radu
IPC分类号： H03H9/02 , H03H3/04 , H03H3/10 , H01L41/312 , H01L41/08 , H01L41/313 , H01L41/187 , H01L41/47 , H01L41/332 , H01L41/337 , H03H9/64
摘要： The present invention relates to a heterostructure, in particular, a piezoelectric structure, comprising a cover layer, in particular, a layer of piezoelectric material, the material of the cover layer having a first coefficient of thermal expansion, assembled to a support substrate, the support substrate having a second coefficient of thermal expansion substantially different from the first coefficient of thermal expansion, at an interface wherein the cover layer comprises at least a recess extending from the interface into the cover layer, and its method of fabrication.
-
公开(公告)号：US20230037734A1
公开(公告)日：2023-02-09
申请号：US17968828
申请日：2022-10-19
发明人： Munehisa WATANABE , Hideki IWAMOTO , Hajime KANDO , Syunsuke KIDO
IPC分类号： H03H9/02 , H03H3/02 , H03H3/04 , H03H3/08 , H01L41/04 , H01L41/047 , H03H9/54 , H03H3/10 , H01L41/18 , H01L41/22
摘要： An elastic wave device includes a supporting substrate, a high-acoustic-velocity film stacked on the supporting substrate and in which an acoustic velocity of a bulk wave propagating therein is higher than an acoustic velocity of an elastic wave propagating in a piezoelectric film, a low-acoustic-velocity film stacked on the high-acoustic-velocity film and in which an acoustic velocity of a bulk wave propagating therein is lower than an acoustic velocity of a bulk wave propagating in the piezoelectric film, the piezoelectric film is stacked on the low-acoustic-velocity film, and an IDT electrode stacked on a surface of the piezoelectric film.
-
8.发明授权公开(公告)号：US11522515B2
公开(公告)日：2022-12-06
申请号：US15922355
申请日：2018-03-15
发明人： Satoru Matsuda , Atsushi Nishimura , Yoshiro Kabe
摘要： An acoustic wave device includes a piezoelectric substrate, a pair of interleaved interdigital transducer electrodes disposed on the piezoelectric substrate, and a dielectric film including silicon oxynitride covering the pair of interleaved interdigital transducer electrodes. The dielectric film exhibits a temperature coefficient of velocity of substantially zero throughout an operating temperature range of the acoustic wave device of between −55° C. and 125° C.
-
公开(公告)号：US20220360247A1
公开(公告)日：2022-11-10
申请号：US17868819
申请日：2022-07-20
发明人： Masakazu MIMURA
摘要： An elastic wave device includes an interdigital transducer electrode, a dielectric film, and a frequency adjustment film are disposed on a LiNbO3 substrate. When Euler Angles of the LiNbO3 substrate are within a range of about 0°±5°, within a range of about θ±1.5°, within a range of about 0°±10°, the interdigital transducer electrode includes a main electrode, a film thickness of the main electrode normalized by a wavelength determined in accordance with an electrode finger pitch of the interdigital transducer electrode is denoted as T, and a density ratio of a material of the main electrode to Pt is denoted as r, the film thickness of the main electrode and θ of the Euler Angles satisfy θ=−0.05°/(T/r−0.04)+31.35°.
-
公开(公告)号：US11482982B2
公开(公告)日：2022-10-25
申请号：US16901032
申请日：2020-06-15
发明人： Kazunori Inoue
摘要： A through-hole that extends from an upper surface of a cover opposite a support to a lower surface of the support facing a substrate is provided in the support and the cover. The through-hole overlaps a portion of a wiring line in a plan view. An acoustic wave device further includes an electrode film that is electrically connected to the wiring line in the through-hole, and a protective layer that includes an insulating material and that covers a portion of the electrode film. The protective layer is connected to the cover and the support in the through-hole. Differences in thermal expansion coefficients between the protective layer and the cover and between the protective layer and the support are smaller than a difference in thermal expansion coefficients between the protective layer and the electrode film.
-
-
-
-
-
-
-
-
-
搜索结果
230 条记录 (耗时 0.02 秒)
