发明申请
US20050130438A1 Method of fabricating a dielectric layer for a semiconductor structure
审中-公开
制造半导体结构的电介质层的方法
- 专利标题： Method of fabricating a dielectric layer for a semiconductor structure
- 专利标题（中）： 制造半导体结构的电介质层的方法
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申请号： US10736444申请日： 2003-12-15
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公开(公告)号： US20050130438A1公开(公告)日： 2005-06-16
- 发明人: Antonio Rotondaro , Luigi Colombo
- 申请人： Antonio Rotondaro , Luigi Colombo
- 专利权人： Texas Instruments Incorporated
- 当前专利权人： Texas Instruments Incorporated
- 主分类号： H01L21/3115
- IPC分类号： H01L21/3115 ; H01L21/314 ; H01L21/318 ; H01L21/31 ; H01L21/469
摘要：
Fabricating a semiconductor structure includes establishing a non-stoichiometry associated with a dielectric layer, where the degree of non-stoichiometry corresponds to a nitrogen profile of the dielectric layer. Deposition of the dielectric layer outwardly from a substrate is controlled to substantially yield the established non-stoichiometry of the dielectric layer. Nitrogen is incorporated into the dielectric layer to substantially yield the nitrogen profile without nitridation of the interface.
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